MPS6601G

The MPS6601G is a single general purpose NPN bipolar junction transistor (BJT) from the MPS family of bipolar transistors. It is designed for general purpose low-power applications and is mostly used for switching and linear amplifications, providing high gain and low power losses. This device has a high breakdown voltage of up to 60V and a maximum current rating of 1A. Its maximum emitter-base voltage is 6V and the collector-base voltage can go up to 30V.

The MPS6601G is manufactured using a planar silicon epitaxial process, which gives it excellent performance with low power consumption and high gain. It has a low output resistance, a wide range of operating temperatures, and an IR drop of 2V. It has a wide common emitter current gain bandwidth of up to 100 MHz, making it an ideal choice for high-frequency and switch-mode applications.

The working principle of the MPS6601G is relatively simple. It consists of three elements: the base which controls the current flow and the emitter and collector elements, which are used to transfer current. When a small current is applied to the base of the transistor, it switches the larger current flow between the collector and emitter. When this larger current passes through the transistor circuit the output voltage is changed, thus making it possible to amplify small changes in voltage.

The MPS6601G has a variety of application fields, including low-current amplifications, switch

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