MPS6602G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 1V
Power - Max:	625mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

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MPS6602G is a general purpose PNP transistor, produced by ON Semiconductor. It is a low voltage single-ended amplifier and designed for use in small signal amplifier circuits, such as audio amplifiers, RF amplifiers, and other high frequency amplifiers. This device is available in a standard SOT-23 package for use in surface mount applications. The MPS6602G is a low voltage, high performance, NPN Bipolar Transistor that operates from a wide range of temperatures. It is designed for use in a wide range of electronic applications that require low noise, high gain, and low power consumption. It is commonly used in small signal amplifier circuits such as audio amplifiers, radio frequency amplifiers, and other circuits requiring high frequency operation. The working principle of the MPS6602G is based on the manipulation of electron flow through the NPN structure. It is a bipolar device that works on the principle of two complementary NPN devices. It operates using the NPN current conduction, wherein electrons are energized by a static electric field, resulting in an increase in the number of electrons in the base region. This increase in number of electrons causes a current to flow through the device, from the collector to the emitter. As a result, the device amplifies the current in the collector to produce a larger current.When the transistor is used in small signal amplifiers, the input signals are applied to the base terminal and the amplified signals are taken from the collector terminal. The MPS6602G can be used in a variety of small signal amplifiers including audio, RF, and high frequency amplifiers. It offers a wide range of operating temperatures, with a maximum of 175 °C, making it suitable for a variety of applications.The MPS6602G is a cost-effective solution for many applications, due to its low power consumption, wide temperature range, and high gain. It also offers a wide operating range, making it ideal for applications that require high performance in terms of gain and noise. As a result, it is used in many consumer electronics, automotive, telecommunications and computing applications.In addition to its uses in small signal amplifiers, the MPS6602G is also used in RF power amplifiers. The RF power amplifiers use the transistor’s features to produce high efficiency and linearity. These features make the MPS6602G suitable for use in systems that require high power output and low noise. Overall, the MPS6602G is a small signal device that is designed for use in amplifiers and other circuits requiring low noise, wide operating temperatures and low power consumption. It is an ideal solution for applications such as RF, audio, and high frequency amplifiers, as well as RF power amplifiers. It offers a wide range of operating temperatures and a high gain, making it an economical choice for many electronic applications.

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