Allicdata Part #: | MPS6724G-ND |
Manufacturer Part#: |
MPS6724G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 1A 1... |
DataSheet: | MPS6724G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 2mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4000 @ 1A, 5V |
Power - Max: | 1W |
Frequency - Transition: | 1GHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92 (TO-226) |
Base Part Number: | MPS6724 |
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A transistor is a three-terminal semiconductor device made from an electrically insulating material such as silicon. Transistors are commonly found in both analog and digital applications, most often in the form of semiconductor integrated circuit (IC) chips. The MPS6724G is a single-stage, single-transistor bipolar junction transistor (BJT) for general purpose applications. It is also referred to as a "small signal" BJT as it is suitable for low power applications.
The MPS6724G was developed as a low-cost device with a wide range of applications. It is suitable for a variety of different operational requirements, and is commonly used in radio frequency (RF) and analog signal distribution circuits. As such, it is often used in a variety of consumer electronics products such as portable radios, cell phones, and other hand-held devices. Additionally, the MPS6724G is frequently used in power control circuits and power supplies.
The MPS6724G is composed of three p-type material layers and three n-type material layers, forming a three-dimensional semiconductor structure, known as a “heterojunction”. The n-type base and collector and p-type emitter are connected via the three-dimensional structure, forming a bipolar transistor. The current flowing through the transistor is determined by the current through the base, which is determined by the voltage applied to it. The entire collector current is determined by the ratio of the applied base current velocity, multiplied by the current amplification factor, the beta of the device.
The output impedance of the MPS6724G is relatively low, making it a suitable choice for power control and/or power supply circuits. This is an important factor to consider when designing these types of circuits, as a low output impedance allows the device to remain stable at higher load currents, resulting in less power dissipation. Additionally, the output impedance of the MPS6724G is also relatively low for RF applications, allowing for better signal transmission quality as well as fewer components.
The MPS6724G has a wide operating voltage range, allowing it to be used in a variety of applications. It can provide a maximum operating voltage of up to 700V and a minimum operating voltage of 2V. Additionally, it can operate over a temperature range of -55 to +175 °C and the power dissipation is up to 625mW. The MPS6724G can also be used in high frequency applications due to its low capacitances, allowing for better performance at higher frequencies.
The MPS6724G is one of the most widely used transistors today due to its low cost and wide range of applications. It is suitable for use in both analog and digital circuits and can be found in a variety of consumer electronics products. Additionally, it is commonly used in RF and analog signal distribution circuits, power control circuits, and power supplies. The low output impedance and wide operating voltage range make it a suitable choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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