MPSW01A Allicdata Electronics
Allicdata Part #:

MPSW01AOS-ND

Manufacturer Part#:

MPSW01A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 1A TO92
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 50MHz 1W Throu...
DataSheet: MPSW01A datasheetMPSW01A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW01A
Description

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MPSW01A is a type of transistor specifically classified as a bipolar, single junction transistor (BJT). It is a component widely used in a variety of electrical devices and systems, such as amplifiers, computers, radios, and switch mode power supplies. MPSW01A transistors feature a wide range of abilities such as amplification, switching, and even withstanding large voltages and currents.

Due to the various functionalities associated with the MPSW01A, its application field can cover a wide range of electronic devices and systems, from simple single-stage amplifiers to high power switching and rectifying circuits. Its most common application is as a switch for electronic circuits, as it is fast, reliable, and cost-efficient. MPSW01A transistors can also be used in amplifier circuits, and as current regulators. In addition, it can function as part of various circuits associated with various sensor systems, and can even be used in high voltage switching and rectifying circuits.

On a more detailed level, the MPSW01A transistor is composed of three layers of semiconductor, typically silicon, germanium, and gallium arsenide. Different layers are combined to form an insulated base, and the majority and minority carriers are misaligned to achieve the main function of the transistor. The base is connected to a collector and a emitter, as specified on the datasheet. When the current flows between the emitter and the base, the collector current increases and flows out at the same rate. The ratio between the output current of the collector and the input current of the emitter is known as the amplification factor. Depending on the datasheet values and the application, the amplification factor can range from several tens of times to several hundred thousand times.

In addition to the various functions discussed above, the MPSW01A also features additional capabilities. This transistor has relatively low saturation voltages and low breakdown voltages, and can withstanding currents up to 10 amps, depending on the datasheet values. As for thermal resistance, the MPSW01A can withstand up to 175°C.

To summarize, the MPSW01A is a bipolar, single junction transistor (BJT) with a wide range of functionalities, suitable for a wide range of application fields. It can be used as a switch, amplifier, current regulator, and part of various sensor systems. It features relatively low saturation voltages, low breakdown voltages, and thermal resistances up to 175°C, and can withstand currents up to 10 amps.

The specific data is subject to PDF, and the above content is for reference

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