MPSW63RLRAG Allicdata Electronics
Allicdata Part #:

MPSW63RLRAG-ND

Manufacturer Part#:

MPSW63RLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MPSW63RLRAG datasheetMPSW63RLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW63
Description

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MPSW63RLRAG is a single bipolar junction transistor (BJT) commonly used in modern electronics. It is used in a wide range of applications, including amplifiers, switches, power supplies, and signal conditioning. It is also used in high-power applications such as motor control, industrial heating, and lighting control.

The MPSW63RLRAG is a P-type device, meaning it is polarized in the + direction. It has a maximum collector current of 4.5A, making it suitable for use in a wide range of high-powered applications. The maximum voltage it can handle is 160V, making it suitable for applications with high operating voltages. It also has a maximum continuous power dissipation of 225W which allows it to safely handle large currents and power levels.

The MPSW63RLRAG operates on a wide range of operating frequencies, from DC to over 200 MHz. Its gain is between 15 and 40, depending on the collector-emitter voltage. Its collector-emitter saturation voltage is typically between 1 V and 1.7 V and its base-emitter saturation voltage is typically between 0.7 V and 1.3 V. This allows it to offer excellent switching performance in a wide range of applications.

The MPSW63RLRAG is commonly used as an amplifier, switch, and power supply in a wide range of applications. It can be used as an amplifier in signal conditioning applications by using its gain to amplify weak signals. It can also be used as a switch to control the flow of current in a circuit. And, it can be used as a power supply to provide a regulated voltage to a circuit.

The working principle of the MPSW63RLRAG is based on the current flow through a bipolar junction transistor. A base-emitter junction is formed between two semiconductor materials, with one side having a positive voltage (in the + direction) and the other having a negative voltage (in the - direction). When a current flows through the base-emitter junction, it creates an electron-hole pair in the base region. This results in a current flow between the collector and emitter of the transistor, allowing for amplification or switching to occur.

The MPSW63RLRAG is a versatile single bipolar junction transistor that can be used in a wide range of applications. It has a wide operating frequency range and a high gain, making it suitable for signal conditioning and switching applications. Its high power level and wide collector-emitter voltage also make it suitable for power supply applications.

The specific data is subject to PDF, and the above content is for reference

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