MPSW13RLRAG Allicdata Electronics
Allicdata Part #:

MPSW13RLRAG-ND

Manufacturer Part#:

MPSW13RLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 30V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 1A 1...
DataSheet: MPSW13RLRAG datasheetMPSW13RLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Description

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The MPSW13RLRAG is a type of transistor known as a bipolar junction transistor, or BJT. It is a single form of BJT, which is an electronic device consisting of three terminals, two layers of semiconductor material, and two or more p-n junctions. The MPSW13RLRAG is a PNP-type transistor, meaning that it has two n-type and one p-type layers of semiconductor material. The terminals of the MPSW13RLRAG are the collector, base and emitter.

BJTs are commonly used for either switching or amplifying electrical signals. They can act as either a normally-closed or a normally-open switch, depending on the applied voltage to the base terminal. This switching ability makes BJTs particularly useful for controlling large amounts of current or voltage with a small signal.In the case of a BJT, the base terminal is considered the control element, as it is the point of connection between the two semiconductor layers. Applying a voltage to the base terminal creates an electric field that causes the p-type layer to become negatively charged, and the n-type layer to become positively charged. This creates a “depletion zone” at the junction between the two layers, which limits the flow of current between them. In this way, the applied voltage to the base terminal determines the flow of current between the collector and emitter terminals.

BJTs can be used to amplify a signal by controlling the current flow between the collector and emitter terminals. This current flow is modulated by the voltage applied to the base terminal, which is proportional to the input signal strength. The output voltage is then amplified to a larger value, making BJTs suitable for a range of applications such as audio amplifiers and RF amplifiers.

In conclusion, the MPSW13RLRAG is a single BJT device consisting of three terminals (collector, base and emitter) and two semiconductor layers. It is used for both switching and amplifying electrical signals, depending on the applied voltage to the base terminal. BJTs are highly versatile and are commonly used in many different applications, making them a key component of modern electronics.

The specific data is subject to PDF, and the above content is for reference

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