MPSW55G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 250mA
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 250mA, 1V
Power - Max:	1W
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92 (TO-226)
Base Part Number:	MPSW55

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The MPSW55G is a single bipolar junction transistor (BJT) that is often used in a variety of applications, including radio frequency power amplifiers and switching applications. It is a NPN device with an oxide-passivated, planar epitaxial structure. The MPSW55G has a high current-gain bandwidth that makes it ideal for radio frequency applications, and its good gain linearity makes it a suitable choice for many power application needs.The MPSW55G is a gain-controlled, bias-controlled NPN power transistor. It is designed with a matched, highly stable current-collector load resistor. The load resistor is typically tuned for the specific application at hand. The device also features low base-emitter junction capacitance and a high breakdown voltage, which makes it well suited for switching applications and other high current applications.The MPSW55G is a unipolar device, meaning that the collector current is always directly proportional to the amount of base current that is delivered to it. This makes it an ideal choice for applications where the particular load must be accurately controlled, such as when an amplifier must be controlled to ensure the maximum power efficiency. The unipolar design of the MPSW55G also makes it possible to achieve good switching speed without the need for additional circuitry.The MPSW55G has a common-emitter configuration with a collector-emitter voltage (VCE) of 60V and a maximum collector current (IC) of 1.5A. This configuration allows the device to operate at higher voltages and currents, making it suitable for applications such as high-voltage switching circuits or power supplies. In addition, the common-emitter configuration allows the MPSW55G to be easily coupled with other transistor amplifiers or logic devices, allowing for a smoother and more reliable circuit design.Unique to the MPSW55G is its added track protection, which makes it more suitable for use in environments where the reliability of circuitry is of paramount importance. The track protection feature prevents the excess current drawn by the device from damaging any adjacent wiring or components. The track protection feature also offers improved over-temperature protection, allowing the device to remain cooler during operation.The MPSW55G is an excellent choice for radio frequency applications, such as radio receivers and transmitters, due to its outstanding gain bandwidth. The device has a gain bandwidth product of 400MHz, allowing it to generate high-frequency signals with excellent fidelity.Overall, the MPSW55G is an ideal choice for many power applications, switching applications, and other high-performance applications. Its low on-state resistance, high current gain, and unique track protection feature make it a reliable and efficient device. The device can be used in a variety of applications such as radio frequency amplifiers, power supplies, and control systems. With its reliable performance, the MPSW55G is a sure choice for a multitude of applications.

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