MPSW63 Allicdata Electronics
Allicdata Part #:

MPSW63OS-ND

Manufacturer Part#:

MPSW63

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 0.5A TO92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MPSW63 datasheetMPSW63 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW63
Description

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MPSW63 is a type of transistor, specifically a single bipolar junction transistor (BJT). It is a widely-used small-signal switching device, capable of providing high switching speeds and low power dissipation.

In terms of its construction, the MPSW63 is a three-terminal semiconductor device comprised of an emitter, a base, and a collector. The base is the control terminal, through which a small current can alter the transistor’s operating parameters significantly. The collector and emitter terminals are the output terminals.

MPSW63 transistors are used in many electronic applications, such as low-power analog circuits and transactor-to-IC interfaces. They are ideal for high-speed switching operations, as well as audio amplification, over-current protection, and signal isolation. They are also used in low-power battery-powered applications such as LCD backlighting control.

The working principle of a MPSW63 transistor is fairly straightforward. When a small current is applied to the base-emitter junction, electrons are injected into the base. This allows larger currents to flow from the collector to the emitter. This phenomenon is due to two effects, which are the forward-bias injection and the reverse-bias depletion. The forward-bias injection causes holes to be created in the base, making it easier for electrons to cross the junction from the emitter to the base. The reverse-bias depletion reduces the number of holes that can cross the junction from the base to the collector. The combination of these two effects causes the current to act as if it is flowing through a switch, allowing a much larger current to flow from the collector to the emitter than the current that was originally applied to the base-emitter junction.

In short, a MPSW63 transistor is an ideal device for use in low-power, high-speed switching operations, audio amplification, signal isolation, and over-current protection. Its three-terminal construction, composed of the emitter, base, and collector, allows a small current to control a much larger current. Utilizing the forward-bias injection and reverse-bias depletion effects, the MPSW63 can switch quickly and efficiently, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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