MPSW45AZL1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 2mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	25000 @ 200mA, 5V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:	TO-92 (TO-226)
Base Part Number:	MPSW45A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The MPSW45AZL1G is a single-transistor bipolar junction transistor (BJT). It is a surface-mounted, hermetically sealed small signal transistor with a range of 0.2 A to 10 A from 10 V to 60 V DC. The MPSW45AZL1G is designed as a NPN BJT that can be used in various applications. This article will discuss the application field and working principle of the MPSW45AZL1G.

Application Field

The MPSW45AZL1G can be used in a wide range of applications. It can be used as a general-purpose transistor in signal and small signal applications. As a switching transistor, it can be used in various applications such as: low power logic circuits, power switching, light-emitting diode (LED) drivers and analog and digital circuits. In addition, it can be used as a high-power amplifier and a high-speed amplifier. The MPSW45AZL1G can also be used in medium-power linear applications, such as RF switch and amplifier circuits, servo-amplifier circuits, and power amplifier circuits. For higher current applications, the MPSW45AZL1G can be used in switching power supplies, DC-to-DC converters, bridge rectifiers, and relays. The MPSW45AZL1G can also be used in low noise amplifier circuits and low thermal noise amplifier circuits.

Working Principle

The MPSW45AZL1G is a NPN transistor which means it has two P-type semiconductor materials and one N-type semiconductor material, forming an insulated gate field-effect structure which is essential to the function of the transistor as a switch. When no voltage is applied to the transistor, no current will flow through it. When a small voltage is applied to the base of the transistor, current flows between the emitter and the collector, providing a medium through which it is possible to control the electrical current flow between the two end points. This is possible because the transistor provides a varying resistance depending on the amount of current going through it. This creates an amplifying effect which can be used to control more current at the output than is applied at the input. The MPSW45AZL1G can be used in a variety of applications, depending on the electrical environment. The most common use of the MPSW45AZL1G is as a high-speed switch. It can also be used as a linear amplifier, current amplifier and also as a current switch.

Conclusion

The MPSW45AZL1G is an ideal single-transistor bipolar junction transistor (BJT) for a wide range of applications. It can be used in various applications, depending on the environment, such as low power logic circuits, light emitting diode (LED) drivers, RF switch circuits, and relays. Its working principle involves the use of a varying resistance which can be used to control the amount of current going through it. This makes the MPSW45AZL1G an ideal choice for various applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description