MPSW55RLRAG Allicdata Electronics
Allicdata Part #:

MPSW55RLRAG-ND

Manufacturer Part#:

MPSW55RLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 1W Th...
DataSheet: MPSW55RLRAG datasheetMPSW55RLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW55
Description

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A MPSW55RLRAG is a type of Transistors - Bipolar (BJT) - Single. It is an NPN (Negative-Positive-Negative) transistor, with an integrated resistor. The main application areas of this transistor are power management, automotive, and communication applications. This transistor can also be used for switch mode amplifiers, oscillators, and voltage regulators.

The device has a maximum collector-emitter voltage of 55V, a maximum collector current of 750mA and a maximum power dissipation of 625mW. The gain of the device is 100 at 250mA collector current, 50 at 400mA collector current, and 25 at 750mA collector current. The minimum breakdown voltage of the device is 40V and the maximum junction temperature of the device is 125°C.

The MPSW55RLRAG has an integrated load resistor that can be used to reduce the power consumption, reduce waste heat and noise, and simplify the drive circuit for the transistor. The resistor value can be selected from 4.7kΩ, 10KΩ or 36KΩ, depending on the desired application. The resistor is connected in series with the collector-emitter network, which reduces the effective junction voltage by the resistor value.

The working principle of the MPSW55RLRAG is based on the NPN transistor structure. When a positive voltage is applied to the base of the transistor, the electrons in the base-collector junction move to the collector, and the collector-emitter junction becomes forward biased. This causes a current to flow through the collector-emitter junction, which is amplified by the action of the base-collector junction. The integrated load resistor helps to reduce the collector current and the power consumption.

These transistors are suited for both linear and switching applications. They are used in amplifiers, switch mode power supplies, voltage regulators, and other power electronic circuits. They are also used in communication applications such as cellular systems, modems, and RF amplifiers. They are also used in audio and video amplifiers, automotive electronics, and computer peripherals.

In summary, the MPSW55RLRAG is a type of Transistors - Bipolar (BJT) - Single which is suitable for a range of applications. It has an integrated resistor for reducing power consumption, and has a low collector-emitter voltage and current gain. The working principle of the device is based on NPN transistor structure and its main application areas are power management, automotive, and communication applications.

The specific data is subject to PDF, and the above content is for reference

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