| Allicdata Part #: | MPSW06RLRAOSCT-ND |
| Manufacturer Part#: |
MPSW06RLRA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 80V 0.5A TO92 |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Th... |
| DataSheet: | MPSW06RLRA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Cut Tape (CT) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max): | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 250mA, 1V |
| Power - Max: | 1W |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Supplier Device Package: | TO-92 (TO-226) |
| Base Part Number: | MPSW06 |
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MPSW06RLRA (making parts small with 6 ring low resistance) is a single, bipolar junction transistor (BJT) that is used for switching operations. It is designed to provide an exceptional low-level BiMOS current switch power control to meet the needs of many applications. This transistor is designed to provide an excellent combination of low on-resistance and high current rating. This device can be used in a variety of applications, such as DC-DC converters, power management integrated circuits, battery management systems, audio amplifiers and power amplifiers.
One of the most common applications of the MPSW06RLRA is to provide current switch control in a wide range of power supply environments. The device is ideal for applications that require both fast switching response and low-level current performance. The low-level current performance can be attributed to the low on-resistance of the device, which helps to reduce power losses in power supply applications. Additionally, the device has a high thermal resistance, which helps to ensure reliable performance even in high-temperature conditions.
The working principle of the MPSW06RLRA is based on the bipolar junction transistor. This type of transistor is composed of two semiconductor layers separated by a barrier layer, which act as the input and output electrodes. The base is used to control the voltage between the collector and the emitter, while the emitter is used to control the current between the base and the collector. When a positive voltage is applied to the base, electrons are attracted towards the emitter and the current, or power, is passed through the transistor. By varying the voltage applied to the base, the current can be varied accordingly.
Another important application for the MPSW06RLRA is for audio amplification applications. The device offers excellent high current and low on-resistance characteristics which make it an ideal choice for audio power amplifiers. The device is designed to provide fast response times and excellent audio performance. Additionally, the device has a wide power range, which allows for a variety of audio signal amplifications.
The MPSW06RLRA is also well suited for battery management systems. By using the device, a high-efficiency current switched power control can be achieved which helps to ensure prolonged battery life. In addition, the device offers low-level current control which helps to reduce charge and discharge losses.
The MPSW06RLRA is an ideal choice for many power applications. Due to its excellent combination of low on-resistance, high current rating and fast switching speed, the device can meet the needs of both DC-DC converters and audio applications. Additionally, the device has a high thermal resistance and low-level current performance which make it well suited for use in battery management systems.
The specific data is subject to PDF, and the above content is for reference
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MPSW06RLRA Datasheet/PDF