MPSW01ARLRAG Allicdata Electronics
Allicdata Part #:

MPSW01ARLRAG-ND

Manufacturer Part#:

MPSW01ARLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 50MHz 1W Throu...
DataSheet: MPSW01ARLRAG datasheetMPSW01ARLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW01A
Description

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MPSW01ARLRAG is a short description of a single bipolar junction transistor that has a large range of application field and working principle. As a type of small signal component, it is suitable for applications such as amplifier circuits, digital circuits, and switch circuits. It is also suitable for a variety of application fields such as automotive, communications, industrial, military, and space.

The integrated structure of a MPSW01ARLRAG consists of two N-channel MOSFETs and two PNP bipolar transistors. It has a flat, flattened upper surface that enables easy assembly on a printed circuit board, as well as its small size which makes it suitable for miniaturization. It also has a collector-emitter breakdown voltage of -15V and a maximum safe operating temperature of 150°C.

Its working principle involves the combination of two semi-conductor layers to form the PNP and NPN junction diodes. It works by utilizing holes that are displaced from the individual P-type and N-type layers in order to generate a current flow. The electrons from the N-type area to the P-type area while the holes travel in the reverse direction. The flow of current can be controlled by the applications of an external voltage which manipulates the flow of holes between the two layers.

MPSW01ARLRAG is a robust and reliable single bipolar junction transistor, with a collector-base voltage rating of -20V and a collector-emitter voltage rating of -90V. It also has a very fast switching performance, with a switching time of less than 100ns. Its small size, high reliability, low voltage degradation and fast switching speed makes it widely applicable in vehicle electronics, digital displays, camera systems and portable equipment.

In addition, MPSW01ARLRAG also offers protection with a built in clamp circuit that limits current to the safe area during overvoltage conditions. This makes it highly suitable for use in applications that require high noise immunity, high operating temperature, and harsh environmental conditions. Other features of this single bipolar junction transistor include a Collector-Emitter Saturation Voltage of -2V, Total Gate Charge of 8µC and Internal Gain of 350.

To sum up, MPSW01ARLRAG is a single bipolar junction transistor with a wide application field and available protection features. Its fast switching speed, small size, and high noise immunity make it suitable for a variety of applications. In addition, its built-in protection circuit provides a high level of safety in harsh or high voltage environments. Therefore, MPSW01ARLRAG is reliable and a good choice for any digital circuit project.

The specific data is subject to PDF, and the above content is for reference

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