MPSW01AG Allicdata Electronics
Allicdata Part #:

MPSW01AGOS-ND

Manufacturer Part#:

MPSW01AG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 1A TO92
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 50MHz 1W Throu...
DataSheet: MPSW01AG datasheetMPSW01AG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Part Number: MPSW01A
Description

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The MPSW01AG is a type of bipolar junction transistor, or BJT, that can be single- or dual-collector. It is commonly used in a wide variety of electronic devices, from automotive to industrial applications. In its most basic form, the MPSW01AG is a three-lead device, with two base leads and a collector lead. The three leads form an electrical circuit that includes the junction between two semiconductor materials, typically a silicon or germanium, to produce an electronic current that can be used to control or amplify a signal.

The MPSW01AG operates in a common-base configuration, meaning that the base of the transistors are joined together while the emitter and collector are separate, allowing current to flow through the device in one direction, with some variations available. This configuration gives the MPSW01AG the ability to have a high current gain due to the base lead having higher resistance than the emitter. This also provides excellent current capabilities, allowing for a wide range of applications, including high-frequency switching, higher-voltage amplification, and overall improved performance.

The MPSW01AG is similar to the more common PNP transistors, however, unlike PNP transistors, the MPSW01AG has a dual collector, meaning both the emitters can be connected to the same collector, allowing for better current capabilities. This additional benefit makes the MPSW01AG ideal for power applications, especially when dealing with current gains of 10 or more. This unique feature is often utilized in industrial applications, such as motor control and other large power requirements, due to its higher current gains.

The working principle of the MPSW01AG is essentially similar to that of other BJTs, but with some important distinctions. As current enters the base lead of the transistor, electrons begin to travel across the base-emitter junction, resulting in a voltage drop, which leads to a current gain. As the current is passed through the collector lead, a voltage is created that is then sent to the load. In this way, the transistor essentially acts as a switch, allowing current to be passed through it when required.

The MPSW01AG is a versatile and reliable transistor and can be used in various applications, from powering high-end audio equipment to controlling the movement of an electric motor. Its dual collector allows for current gains of 10 or more, making it ideal for applications where high current outputs are required. Its common-base configuration provides excellent current handling and amplification properties, making it a top choice for many electronics applications. The MPSW01AG is a reliable and cost-effective transistor solution for any application requiring high-performance output.

The specific data is subject to PDF, and the above content is for reference

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