MT29C1G12MAACYAKD-5 IT Allicdata Electronics
Allicdata Part #:

MT29C1G12MAACYAKD-5IT-ND

Manufacturer Part#:

MT29C1G12MAACYAKD-5 IT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH RAM 1G PARAL 137TFBGA
More Detail: FLASH - NAND, Mobile LPDRAM Memory IC 1Gb (64M x 1...
DataSheet: MT29C1G12MAACYAKD-5 IT datasheetMT29C1G12MAACYAKD-5 IT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 137-TFBGA
Supplier Device Package: 137-TFBGA (10.5x13)
Base Part Number: MT29C1G12M
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the world of digital technology, memory devices are essential components of any computer system. Among all the available types of memory, MT29C1G12MAACYAKD-5 is a commonly used one, which has various applications in different fields and bears a unique working principle.

MT29C1G12MAACYAKD-5 is a type of Single-Bit NAND Flash memory. This memory type is widely used in a variety of embedded systems and electronic devices, like metering systems, modems and automotive applications. As a single-bit NAND Flash, MT29C1G12MAACYAKD-5 has the features of low cost, low power consumption and high speed, which makes it a great fit for these applications.

The working principle of MT29C1G12MAACYAKD-5 is based on NAND architecture. This memory is comprised of one-transistor memory cells in the shape of an X-Y matrix with two transistors in each cell. In this architecture, the cells are connected in a Grid configuration and each cell can be programmed and erased in blocks. The programming and erasing of data uses Fowler-Nordheim tunneling based on charge trapping mechanism.

When the device is read, a voltage is applied which causes electrons to be emitted from the cells. The electrons travel through the tunneling oxide layer and the gate, and then they create a readout current. During programming or erasing, the applied voltage results in charge being trapped or released, thus changing the state of the bit and allowing for storage of the desired data.

The power consumption and endurance of MT29C1G12MAACYAKD-5 memory is of utmost importance for most embedded systems. This memory can operate on up to 2.7V with minimal power consumption and it has a great amount of endurance, with up to 1,000 erase/program cycles. This allows the memory to be used in applications where power is at a premium or where the device needs to be operated for long periods of time.

In addition, MT29C1G12MAACYAKD-5 has an impressive list of features, such as Data-Locking, Wear Leveling, Page Augmented Programming and Error Correction capabilities which make it well suited for various applications. This memory is reliable, cost-effective and can be found in a wide variety of electronic devices.

MT29C1G12MAACYAKD-5 is an ideal choice for embedded applications with its low power consumption, high speed and extensive data storage capabilities. Its NAND architecture allows for low cost and full flexibility in the targeted application, making it one of the most popular memory device types available.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MT29" Included word is 40
Part Number Manufacturer Price Quantity Description
MT29F1G08ABBDAH4:D Micron Techn... -- 1000 IC FLASH 1G PARALLEL 63VF...
MT29F64G08CFACBWP-12:C Micron Techn... 0.0 $ 1000 IC FLASH 64G PARALLEL 48T...
MT29F256G08CMCABH2-10Z:A Micron Techn... 0.0 $ 1000 IC FLASH 256G PARALLEL 10...
MT29F512G08CUCDBJ6-6R:D TR Micron Techn... 0.0 $ 1000 IC FLASH 512G PARALLEL 16...
MT29E1T08CMHBBJ4-3:B TR Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 333M...
MT29E768G08EEHBBJ4-3ES:B TR Micron Techn... 0.0 $ 1000 IC FLASH 768G PARALLEL 33...
MT29F1T208ECCBBJ4-37:B TR Micron Techn... 0.0 $ 1000 IC FLASH 1.125T PARALLEL ...
MT29TZZZ4D4BKERL-125 W.94M TR Micron Techn... 0.0 $ 1000 MCP 4GX8/128MX32 PLASTIC ...
MT29F1T08CPCBBH8-6C:B Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 167M...
MT29F1G08ABAEAWP:E TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
MT29F2G08ABAEAH4-E:E TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F16G08ABABAWP-AIT:B Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL TSO...
MT29F2G01ABAGDSF-IT:G Micron Techn... 0.0 $ 1000 IC FLASH 2G SPI SOICFLASH...
MT29TZZZ8D5JKEZB-107 W.95Q Micron Techn... 0.0 $ 1000 MLC EMMC/LPDDR3 72GMemory...
MT29F1G08ABBEAM68M3WC1 Micron Techn... 0.0 $ 1000 SLC 1G DIE 128MX8Memory I...
MT29F2G08ABDHC-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G16ABDHC-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F1G16ABBEAH4-ITX:E TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29C4G96MAAHBACKD-5 WT Micron Techn... 0.0 $ 1000 IC FLASH RAM 4G PARAL 137...
MT29F1T08CPCABH8-6:A Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 166M...
MT29F256G08CJAAAWP-ITZ:A Micron Techn... 0.0 $ 1000 IC FLASH 256G PARALLEL 48...
MT29F16G08CBECBL72A3WC1P TR Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL WAF...
MT29F4G16ABADAM60A3WC1 Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL WAFE...
MT29F1T08CQCBBG2-6R:B TR Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 167M...
MT29F1T08CUCBBH8-6R:B TR Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 167M...
MT29F384G08EBHBBJ4-3RES:B TR Micron Techn... 0.0 $ 1000 IC FLASH 384G PARALLEL 33...
MT29F1T08EMHAFJ4-3RES:A TR Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 333M...
MT29F256G08CECEBJ4-37ITRES:E TR Micron Techn... 0.0 $ 1000 MLC 256G 32GX8 VBGA IT DD...
MT29F1G08ABAEAWP-IT:E TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
MT29F256G08AUCABH3-10IT:A Micron Techn... 0.0 $ 1000 IC FLASH 256G PARALLEL 10...
MT29F32G08AFACAWP-IT:C Micron Techn... 0.0 $ 1000 IC FLASH 32G PARALLEL 48T...
MT29F1G08ABBDAH4-ITX:D Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F16G08ABACAWP-Z:C Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL 48T...
MT29F16G08ABACAWP:C TR Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL 48T...
MT29F1T08CUCABK8-6:A TR Micron Techn... 0.0 $ 1000 IC FLASH 1T PARALLEL 167M...
MT29E2T08CUHBBM4-3:B TR Micron Techn... 0.0 $ 1000 IC FLASH 2T PARALLEL 333M...
MT29F256G08CMEDBJ5-12IT:D TR Micron Techn... 0.0 $ 1000 IC FLASH 256G PARALLEL 83...
MT29F2T08CVCCBG6-6C:C Micron Techn... 0.0 $ 1000 IC FLASH 2T PARALLEL 167M...
MT29F128G08AKEDBJ5-12:D Micron Techn... 0.0 $ 1000 IC FLASH 128G PARALLEL 13...
MT29F32G08ABCDBJ4-6ITR:D TR Micron Techn... 0.0 $ 1000 IC FLASH 32G PARALLEL 166...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics