
Allicdata Part #: | MT29C1G12MAACYAKD-5IT-ND |
Manufacturer Part#: |
MT29C1G12MAACYAKD-5 IT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH RAM 1G PARAL 137TFBGA |
More Detail: | FLASH - NAND, Mobile LPDRAM Memory IC 1Gb (64M x 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH - NAND, Mobile LPDRAM |
Memory Size: | 1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 137-TFBGA |
Supplier Device Package: | 137-TFBGA (10.5x13) |
Base Part Number: | MT29C1G12M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In the world of digital technology, memory devices are essential components of any computer system. Among all the available types of memory, MT29C1G12MAACYAKD-5 is a commonly used one, which has various applications in different fields and bears a unique working principle.
MT29C1G12MAACYAKD-5 is a type of Single-Bit NAND Flash memory. This memory type is widely used in a variety of embedded systems and electronic devices, like metering systems, modems and automotive applications. As a single-bit NAND Flash, MT29C1G12MAACYAKD-5 has the features of low cost, low power consumption and high speed, which makes it a great fit for these applications.
The working principle of MT29C1G12MAACYAKD-5 is based on NAND architecture. This memory is comprised of one-transistor memory cells in the shape of an X-Y matrix with two transistors in each cell. In this architecture, the cells are connected in a Grid configuration and each cell can be programmed and erased in blocks. The programming and erasing of data uses Fowler-Nordheim tunneling based on charge trapping mechanism.
When the device is read, a voltage is applied which causes electrons to be emitted from the cells. The electrons travel through the tunneling oxide layer and the gate, and then they create a readout current. During programming or erasing, the applied voltage results in charge being trapped or released, thus changing the state of the bit and allowing for storage of the desired data.
The power consumption and endurance of MT29C1G12MAACYAKD-5 memory is of utmost importance for most embedded systems. This memory can operate on up to 2.7V with minimal power consumption and it has a great amount of endurance, with up to 1,000 erase/program cycles. This allows the memory to be used in applications where power is at a premium or where the device needs to be operated for long periods of time.
In addition, MT29C1G12MAACYAKD-5 has an impressive list of features, such as Data-Locking, Wear Leveling, Page Augmented Programming and Error Correction capabilities which make it well suited for various applications. This memory is reliable, cost-effective and can be found in a wide variety of electronic devices.
MT29C1G12MAACYAKD-5 is an ideal choice for embedded applications with its low power consumption, high speed and extensive data storage capabilities. Its NAND architecture allows for low cost and full flexibility in the targeted application, making it one of the most popular memory device types available.
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