MT29F4G16ABADAM60A3WC1

Series:	--
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (256M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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MT29F4G16ABADAM60A3WC1 Overview

The MT29F4G16ABADAM60A3WC1 is a high-performance NAND flash memory device from Micron Technology. It belongs to the MT29F4GxxABADAB family, which is part of the company’s ultra-high-density Flash solutions. This particular product is an 8-gigabit (32-gigabyte) device that provides the market with cost-effective, high-performance storage options. It delivers a maximum access time of 30 nanoseconds and a random read performance of up to 95 MB/s.

Application Field

The MT29F4G16ABADAM60A3WC1 is often used in a broad range of applications, such as digital photography, dash cams, medical imaging, and data storage solutions. Due to its industry-leading performance, it is well suited for devices that require fast and reliable data transfer speeds.The device is also used in flash-based portable storage solutions, such as USB flash drives and solid-state drives (SSDs). It is often used for fail-safe data storage, as the NAND flash technology’s ability to withstand environmental stresses and impacts makes it ideal for these applications.In addition, it is often used for automotive applications, such as in-vehicle infotainment systems, due to its reliability and capacity. This allows for potentially large amounts of data to be stored without requiring frequent downloads or updates.

Working Principle

The foundation of the MT29F4G16ABADAM60A3WC1 is the NAND flash technology. NAND flash is a form of non-volatile memory that retains data even when the power is turned off. NAND flash is the basis of all flash memory devices, such as USB flash drives and SSDs.NAND flash works by storing data in tiny floating-gate transistors (cells) that contain both a control gate and a floating gate. The control gate acts like a switch that is used to read, write, and erase data stored in the cells. The floating gate acts like a charge barrier that prevents electrons from flowing between the control gate and the cell.When data is written to the cell, electrons are pushed by the control gate into the floating gate, which stores a small electrical charge on the cell. This charge acts as the data stored in the cell. When the cell is read, the charge on the floating gate is detected by the control gate, which is then interpreted by the device as a binary 1 or 0.Erasing a cell moves the charge from the floating gate to the control gate, effectively setting the cell to a binary 0 state. This process is repeated for every cell in the device, and is the basis of how NAND flash memory works.

Conclusion

The MT29F4G16ABADAM60A3WC1 is a high-performance NAND flash memory device that provides reliable and cost-effective storage solutions. It delivers industry-leading performance and access times, making it a great choice for applications that require efficient and reliable data storage. It is often used in digital photography, dash cams, medical imaging, data storage, portable storage devices, and automotive applications. The device is based on NAND flash technology, which uses tiny floating-gate transistors to store and transfer data.

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