
Allicdata Part #: | MT29F1T08CUCBBH8-6R:BTR-ND |
Manufacturer Part#: |
MT29F1T08CUCBBH8-6R:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1T PARALLEL 167MHZ |
More Detail: | FLASH - NAND Memory IC 1Tb (128G x 8) Parallel 167... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Tb (128G x 8) |
Clock Frequency: | 167MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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Memory
MT29F1T08CUCBBH8-6R:B TR is a type of NAND flash memory, which is used in 3D XPoint memory modules and devices. This type of memory has an extremely wide range of applications, ranging from consumer electronics and gaming to industrial, automotive and professional devices. It is an ideal solution for applications that require non-volatile, high-performance, low-power and high-density memory.
Application Field
The MT29F1T08CUCBBH8-6R:B TR memory is particularly well-suited for different types of consumer electronics, including:
- Smartphones and tablets
- Cameras
- Wearable devices
- Gaming consoles
- Security systems
It is also commonly used in industrial and automotive equipment, such as:
- Factory automation
- Robotics
- Medical equipment
- Automotive infotainment
- Automotive navigation systems
This type of memory is also used in datacenters, servers and other high-performance computing applications. The small size and high-density of the MT29F1T08CUCBBH8-6R:B TR memory also makes it an ideal solution for embedded devices, as it doesn\'t require additional space to store large amounts of memory.
Working Principle
MT29F1T08CUCBBH8-6R:B TR memory is operated by NAND flash technology, which uses two-dimensional vertically-stacked memory cells to optimize performance. NAND flash memory is based on a combination of floating-gate transistors and tunnel insulators, which allows for the storage of data in the form of electrical charges. This type of memory is non-volatile, meaning it does not need to be powered to retain data, and is incredibly fast, allowing for the storage and retrieval of data in a fraction of a second.
NAND flash memory also has a high durability, due to its ability to withstand extreme temperatures and other environmental conditions. Additionally, NAND flash memory is available in different densities, allowing for the storage of more data in a smaller space. The MT29F1T08CUCBBH8-6R:B TR memory is capable of storing up to 16Gb, making it an ideal solution for a wide range of applications.
Conclusion
The MT29F1T08CUCBBH8-6R:B TR memory is an ideal solution for a wide range of applications, ranging from consumer electronics and gaming to automotive and industrial industries. It is capable of storing up to 16Gb of data and is non-volatile and highly durable, making it an ideal solution for embedded systems. This type of memory is operated by NAND flash technology, which uses two-dimensional vertically-stacked memory cells to optimize performance.
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