MT29F384G08EBHBBJ4-3RES:B TR Allicdata Electronics
Allicdata Part #:

MT29F384G08EBHBBJ4-3RES:BTR-ND

Manufacturer Part#:

MT29F384G08EBHBBJ4-3RES:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 384G PARALLEL 333MHZ
More Detail: FLASH - NAND Memory IC 384Gb (48G x 8) Parallel 33...
DataSheet: MT29F384G08EBHBBJ4-3RES:B TR datasheetMT29F384G08EBHBBJ4-3RES:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 384Gb (48G x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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The MT29F384G08EBHBBJ4-3RES:B TR Memory is used in a variety of applications that require efficient data storage and management. This memory is designed to provide fast write and read speeds, low power consumption, and superior reliability. This memory is ideal for applications that need to store large volumes of data quickly and securely.

The MT29F384G08EBHBBJ4-3RES:B TR Memory is a type of NAND flash memory. NAND flash memory is composed of memory cells, each of which is connected to a control gate and linked together through a series of transistors. The control gate determines whether data is written to the transistor or read from it in the same manner as a computer’s central processing unit (CPU). The NAND gate is more efficient than the NOR gate, which is the traditional electronic component used for memory storage.

The MT29F384G08EBHBBJ4-3RES:B TR Memory is designed to provide fast write and read speeds as well as increased storage capacity. This is due to the fact that NAND flash chips are able to operate in a much smaller area than NOR chips. The smaller area decreases the internal wiring, allowing more data to be stored in the same size chip. The MT29F384G08EBHBBJ4-3RES:B TR Memory is also more reliable than NOR chips because it does not suffer from voltage drop-off during operation. This makes it ideal for applications where reliability is essential.

The MT29F384G08EBHBBJ4-3RES:B TR Memory is also designed to consume less power than NOR chips. NAND flash chips are able to operate with less power than other types of memory, as they require fewer transistors. This decreases the power that is needed to operate memory, saving energy and increasing the lifespan of the memory. Additionally, the MT29F384G08EBHBBJ4-3RES:B TR Memory has a low standby current, making it suitable for battery-operated applications that require long periods of inactivity.

The MT29F384G08EBHBBJ4-3RES:B TR Memory is primarily used in devices that need to store large amounts of data quickly, such as hard drives. This type of memory is also used in smart phones and tablets, where it is used to store applications and other data. Additionally, it is also used in digital cameras, where it is used to store photos and videos. It is also used in some computer systems for caching data and increasing performance.

The MT29F384G08EBHBBJ4-3RES:B TR Memory has the ability to write and read data quickly and efficiently, while consuming less power and providing superior reliability. This makes it suitable for a variety of applications that require high-performance data storage and management. The MT29F384G08EBHBBJ4-3RES:B TR Memory is a reliable, cost-effective solution for any application that requires fast, reliable data storage and processing.

The specific data is subject to PDF, and the above content is for reference

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