MT29F256G08CECEBJ4-37ITRES:E TR

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Memory is an important component of any electronic device and MT29F256G08CECEBJ4-37ITRES:E TR is an example of high-end memory device primarily used in military grade and aerospace applications. It has a typical power consumption of 50mA, an operating temperature range of -55°C to +125°C, and a data retention of 64 megabits per cell.The MT29F256G08CECEBJ4-37ITRES:E TR is a Multi-level Cell (MLC) type NAND Flash memory device that is primarily used for military grade and aerospace applications. It is designed to endure extended periods of high temperature and high pressure environments found in these applications. It is also capable of providing read/write speed up to 30/18M op/s, respectively.The Multi-level Cell (MLC) architecture of the MT29F256G08CECEBJ4-37ETRES:E TR allows for a storage capacity of up to 256GB and can work with an advanced arrangement of multi-bit-per-cell (MBPC) program and erase operations. This device offers greater protection against power failure, and higher data retention.This memory device provides a security feature that can be used to protect users’ data against unauthorized access. It supports a two-level cryptographically secure identity system that provides encryption keys of up to 256bits. This encryption feature is commonly used in military grade applications.Another key feature of the MT29F256G08CECEBJ4-37ETRES:E TR memory device is its unique design layout to save space in a customer’s device. The device is 4 times smaller than a comparable SLC device, which reduces its size by 56%. This helps to save space in tight areas, such as under the battery in mobile applications or in an aircraft or satellite’s instrumentation.It is also designed with an advanced error correction code (ECC) engine for high-reliability, which helps to automatically correct any single-bit errors that may occur during write and read operations. This also ensures data integrity and decreases the effects of wear on the device.To conclude, the MT29F256G08CECEBJ4-37ITRES:E TR memory device is a reliable, low-power and high-speed device designed primarily for military grade and aerospace applications. It is designed to work in extreme environments and offer robust security features. Furthermore, its reduced form factor further helps to save design space in customer’s end products.

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