MT29F32G08AFACAWP-IT:C Allicdata Electronics
Allicdata Part #:

MT29F32G08AFACAWP-IT:C-ND

Manufacturer Part#:

MT29F32G08AFACAWP-IT:C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 32Gb (4G x 8) Parallel 48...
DataSheet: MT29F32G08AFACAWP-IT:C datasheetMT29F32G08AFACAWP-IT:C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Base Part Number: MT29F32G08
Description

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Memory: MT29F32G08AFACAWP-IT:C Application Field and Working Principle

The MT29F32G08AFACAWP-IT:C is a 32 gigabit (4 gigabyte (GB)) Multi-Chip Package (MCP) of NAND Flash memory. It combines 32 nanometer process technology with a unique cell-level architecture, resulting in superior performance, scalability and endurance. Characterized by data reliability and endurance, the MT29F32G08AFACAWP-IT:C is an ideal choice for applications requiring both long-term data preservation and protection.

The MT29F32G08AFACAWP-IT:C is designed to deliver superior performance and durability in read/write applications requiring high data retention, such as network storage devices, digital cameras, digital music players, USB drives, and automotive media players. It is also ideal for use in systems where data reinitialization or recovery is required such as industrial applications or military systems.

The MT29F32G08AFACAWP-IT:C utilizes Flash-Optimized, Multi-Banked Architecture (FOMBA) technology. FOMBA enables the NAND Flash memory cell array to be organized into 16 banks which dramatically increase the performance of write operations within the chip. FOMBA Technology makes the data more reliable and uniform and reduces the time it takes for a write operation to occur. This ability to switch between banks and partitions helps to reduce the time it takes for read and write operations and helps to increase the lifetime of each cell as well.

The MT29F32G08AFACAWP-IT:C is designed with multiple layers of error correction and redundancy. The error-correction layer protects the data and ensures its reliability. The layers of redundancy are used to ensure the integrity of the data in the event of unexpected power loss or other anomalies. This helps the memory to retain its data integrity even during power disturbances, ensuring that the data within is not lost.

In addition, the MT29F32G08AFACAWP-IT:C integrates several advanced NAND Flash memory technologies, such as wear leveling and power failure/data scrubbing. Wear leveling helps to support thousands of write and erase cycles, while data scrubbing protects the data from power failure. These features help to ensure reliable, resilient performance of the memory over time.

The MT29F32G08AFACAWP-IT:C is ideal for use in mission critical applications where data integrity is essential. Its superior reliability and endurance make it a highly reliable and efficient storage solution for applications in harsh environment, industrial, automotive and aerospace/defense markets.

The specific data is subject to PDF, and the above content is for reference

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