
Allicdata Part #: | MT29F256G08CMEDBJ5-12IT:DTR-ND |
Manufacturer Part#: |
MT29F256G08CMEDBJ5-12IT:D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256G PARALLEL 83MHZ |
More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 83... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 256Gb (32G x 8) |
Clock Frequency: | 83MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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Memory is one of the most important components which every device, system or machine needs. It is used in different applications and forms. MT29F256G08CMEDBJ5-12IT:D TR is one type of memory which can be used in different application fields and has some particular working principle. In this article, we will go through the application fields and working principle of the MT29F256G08CMEDBJ5-12IT:D TR memory.
Application fields
MT29F256G08CMEDBJ5-12IT:D TR memory can be used in different application fields. Its main application fields are embedded systems, PCs, handheld devices and automotive. Embedded systems usually require some reliable data retention and control which this memory provides. It is widely used for various graphic applications in PCs, including video display controlling and video gaming. It is also used in many kinds of handheld devices, such as smart phones, tablets and PDAs. Its low power consumption and complex algorithms are highly used in automotive to control signal processing and data storage.
Working Principle
MT29F256G08CMEDBJ5-12IT:D TR uses the NOR Flash process. It is designed for use in applications that need a high level of reliability and fidelity. The memory is organized byte by byte and is programmed with two full level gates (also known as circuitry) per byte. The two gates are used to open and close the electrical connections to the read and write pins. This allows the memory to be programmed and erased at a much faster rate than other memories that use a single level gate. The main feature of this memory is enhanced data retention, which significantly reduces the risk of data loss due to power failure. The memory also makes sure that the programmed data remains intact even after a power loss.
MT29F256G08CMEDBJ5-12IT:D TR\'s greatest feature is its error-correcting code (ECC) capability, which detects and corrects any errors in the data as it is written to or read from the memory. This ensures the highest degree of reliability and efficiency in the memory\'s operation, allowing it to be used in applications that require a high degree of accuracy and reliability, like in embedded systems. The memory also offers a wide range of density options, ranging from 1Kb to 8TB, allowing it to be used in a variety of applications.
MT29F256G08CMEDBJ5-12IT:D TR also has a low-power standby mode which enables applications to operate for extended periods of time without consuming too much energy. The memory also has a self-timing feature which allows it to switch to different frequencies depending on the external clock frequency, allowing for greater flexibility in data rates.
Conclusion
In conclusion, MT29F256G08CMEDBJ5-12IT:D TR is a versatile and reliable type of flash memory which offers a wide range of applications. Its enhanced data retention, error-correcting code (ECC) capability and low-power standby mode make it ideal for embedded systems, PCs, handheld devices and automotive applications. Its wide range of density options and self-timing feature also provide greater flexibility in data rates.
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