MT29F1G08ABAEAWP-IT:E TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	MT29F1G08

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Memory: MT29F1G08ABAEAWP-IT:E TR Application Field and Working PrincipleAs technology advances, the world of computer memories are ever-evolving, with the development of new memory technologies. MT29F1G08ABAEAWP-IT:E TR, manufactured by STMicroelectronics, is a new type of memory device that combines the characteristics of traditional NOR-type Flash memory and NAND-type multi-level cell (MLC) memory. This memory device offers a higher number of data read and write operations than NOR Flash and a lower cost than NAND Flash.MT29F1G08ABAEAWP-IT:E TR is designed to provide fast and reliable performance. The memory device is designed with a high-performance 8-bit microcontroller with an integrated cache and optimized programming algorithms. It also utilizes an advanced low-power design to minimize power consumption. This allows for higher read and write performance over NOR-type memory.In addition to its high-performance design, MT29F1G08ABAEAWP-IT:E TR includes several features that set it apart from other memory technologies. The device utilizes an advanced dual-cell Flash structure to support higher erase sizes and a 2-bit per cell architecture to provide enhanced scalability and energy efficiency. In order to maximize performance, the device also includes a dedicated erase engine and a specialized internal parallel programming engine.The device is available in a variety of different capacities, ranging from 4 MB to 128 MB, and is designed for applications that require high-performance memory, such as digital cameras, portable media players, and mobile phones. Additionally, the device is designed to be backward-compatible with both NOR and NAND Flash.The primary application field of MT29F1G08ABAEAWP-IT:E TR is embedded devices that require fast and reliable read/write capabilities. The device is capable of supporting both file systems, such as FAT32, FAT16 and FAT12, as well as data compression, allowing for the storage of large files or compressed data.MT29F1G08ABAEAWP-IT:E TR has several operating modes that can be used to optimize performance. The device can be programmed in either synchronous or asynchronous mode, allowing for the selection of optimal performance. Furthermore, the device features a four-level power-down technology, allowing it to operate in ultra-low power modes while still preserving important data.The underlying operating principle of the device is based on Flash technology. The device utilizes a dual-cell Flash structure that contains both a Flash memory and an embedded 16-bit interface controller. The controller is responsible for data access operations, such as read or program operations.Moreover, MT29F1G08ABAEAWP-IT:E TR features an internal parallel programming engine, allowing for high-speed data transfer and programming. The device also features an advanced ECC engine that ensures data integrity during both read and program operations.In summary, MT29F1G08ABAEAWP-IT:E TR is a new type of memory device that combines the characteristics of traditional NOR-type Flash memory and NAND-type multi-level cell (MLC) memory. The device is designed to provide fast and reliable performance and is available in a variety of capacities. The memory device utilizes a dual-cell Flash structure and an embedded 16-bit interface controller, as well as an internal parallel programming engine and an advanced ECC engine. The device is well-suited for applications that require high-performance memory, such as digital cameras, portable media players, and mobile phones.

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