MT29F2G01ABAGDSF-IT:G

Introduction:

MT29F2G01ABAGDSF-IT:G, a multi-level cell (MLC) NAND Flash memory, is a product of Micron technology. It is a storage device that stores digital information in the form of a bunch of electrons stored in the memory cells and cells of the memory. The MT29F2G01ABAGDSF-IT:G is a single-chip, two-bit-per-cell NAND Flash memory that is built on either an 10 nm or 14 nm process technology. The memory features a 128 Gigabyte (GB) density and is available in a 48-ball TSOP package form factor.

Application Field:

The MT29F2G01ABAGDSF-IT:G is ideal for a wide range of applications, including mobile phones, digital cameras, notebook computers, tablets, and other mobile computing devices. Its high performance, increased capacity, and low power consumption make it an excellent choice for integrating large-capacity flash memory into slim, mobile designs. Its low power consumption and thermal output enable a swift response to commands, providing users with a seamless user experience.

The MT29F2G01ABAGDSF-IT:G is an extremely versatile storage device, making it an ideal choice for solid-state storage applications such as SSDs and embedded applications, such as automotive and industrial. Its high performance and low power consumption enable superior applications for these embedded design challenges.

Working Principle:

MT29F2G01ABAGDSF-IT:G is based on the two-bit-per-cell NAND Flash memory concept. NAND Flash memory utilizes a technology known as floating gate transistors to store the data. Each memory cell is composed of a single transistor with one or more floating gate transistors. When a voltage is applied to the control gate of the floating gate transistors, electrons are drawn onto the floating gate, thus indicating the presence of a "1". When a voltage is removed from the control gate, no electrons remain on the floating gate, thus indicating the presence of a "0".

MT29F2G01ABAGDSF-IT:G utilizes an advanced NAND architecture with its two bit per cell technology. This enhances its write speed and increases its capacity without sacrificing performance. This technology allows for reading, writing and erasing two bits of data simultaneously. The memory also incorporates features such as error correction code (ECC) for improved data integrity and wear leveling to extend its lifespan.

Conclusion:

The MT29F2G01ABAGDSF-IT:G is a multi-level cell (MLC) NAND Flash memory device that utilizes an advanced two-bit-per-cell technology. It is a low power device with a maximum speed of 80MB/s read/write speed, and a capacity of up to 128GB. It is an ideal choice for a wide range of applications including mobile phones, digital cameras, notebook computers, tablets, and other mobile computing devices.