
Allicdata Part #: | MT29E2T08CUHBBM4-3:BTR-ND |
Manufacturer Part#: |
MT29E2T08CUHBBM4-3:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2T PARALLEL 333MHZ |
More Detail: | FLASH - NAND Memory IC 2Tb (256G x 8) Parallel 333... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Tb (256G x 8) |
Clock Frequency: | 333MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.5 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Description
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Memory: MT29E2T08CUHBBM4-3:B TR Application Field and Working Principle h2>Memory is one of the most important components in modern electronic systems. Without memory, the processor would be unable to store and retrieve data, making the system inoperable. As such, it is essential to have a reliable memory option available, and one of the most popular choices is the MT29E2T08CUHBBM4-3:B TR. This type of memory offers a number of advantages for use in many applications, and this article will go into detail about its areas of application, as well as its working principles.The MT29E2T08CUHBBM4-3:B TR is an asynchronous RAM module that uses a 3D architecture, which makes it ideal for applications requiring high read/write speeds. This type of memory is capable of storing up to 32GB of data, providing a significant amount of storage space. In addition, the module boasts a number of other features, including DDR3 or DDR4 support, along with error correcting codes, which offer a high level of data integrity.The MT29E2T08CUHBBM4-3:B TR can be used in a wide range of applications, from consumer electronics to smart devices to industrial automation. In consumer electronics, the module can be used in a variety of devices, such as smartphones, laptops, TVs, and more. Its 3D architecture and high read/write speeds make it ideal for these types of applications. In addition, the module is also used in many smart device applications, such as fitness trackers, smartwatches, and other wearables.In industrial applications, the MT29E2T08CUHBBM4-3:B TR can be used for a variety of tasks, such as data management and process control. In addition, its 3D architecture also makes it ideal for industrial automation, as it can be used to store and extract data with great speed and accuracy.The working principle of the MT29E2T08CUHBBM4-3:B TR is based on the use of 3D TSV technology. This technology allows for the transfer of data between layers of chips, which makes it possible for the module to operate at its peak efficiency. In addition, this technology also allows for very fast access times, as data can be transferred between layers in a matter of nanoseconds.In conclusion, the MT29E2T08CUHBBM4-3:B TR is an asynchronous RAM module that is used in a variety of applications, from consumer electronics to smart devices to industrial automation. It operates on the principle of 3D TSV technology, which makes it capable of operating at peak efficiency and accessing data quickly. With its high storage capacity and impressive features, the MT29E2T08CUHBBM4-3:B TR is an excellent choice for many applications.
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