MT29C2G24MAAAAKAMD-5 IT TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH, RAM
Technology:	FLASH - NAND, Mobile LPDRAM
Memory Size:	2Gb (256M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	130-VFBGA
Supplier Device Package:	130-VFBGA (8x9)
Base Part Number:	MT29C2G24M

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Overview of MT29C2G24MAAAAKAMD-5 IT TR

MT29C2G24MAAAAKAMD-5 IT TR is a non-volatile semiconductor memory device manufactured by Micron, a leading global manufacturer of semiconductor components. It is a 2Gb DDR4 SDRAM (Dynamic Random Access Memory) with half-density (1Gb) stack technology. The device can store up to 2GiB of data and provides a maximum access time of 9.75ns at 1200MHz. The device features self-refresh, thermal-awareness, thermal throttling, and power down modes for improved performance and energy efficiency.

Application Fields of MT29C2G24MAAAAKAMD-5 IT TR

MT29C2G24MAAAAKAMD-5 IT TR has a wide range of applications in the computing, networking and storage industries. It is used in servers, workstations, desktop PCs, notebooks, servers, and other embedded systems. The device provides high-performance and an improved overall system efficiency, as well as increased gaming performance. The application fields of MT29C2G24MAAAAKAMD-5 IT TR include:

Networking

This DRAM device has the potential to increase the performance of switches, routers and load balancers. It enables the development of more reliable and highly efficient network equipment.

Computing

MT29C2G24MAAAAKAMD-5 IT TR is primarily used in computers for improving the overall system performance and efficiency. It is suitable for use in applications that require a high-bandwidth, low-latency memory interface, and increases the system performance by reducing memory read/write time.

Storage

The device can also be used in storage applications, such as hard drives and flash drives. It can be used for storing large amounts of data, and for faster data retrieval and access.

Working Principle of MT29C2G24MAAAAKAMD-5 IT TR

MT29C2G24MAAAAKAMD-5 IT TR is a dynamic random access memory (DRAM) device. In the most general terms, DRAM is a type of semiconductor memory that uses special transistors to store data as charged particles on a substrate. When a row and a column intersect, a memory cell is formed, which can store a single bit of data.When power is applied, the device loads its data from the row and column combination, allowing access to the stored data. When the data is accessed, the device refreshes the memory cells, restoring the state of the cell and allowing access to the stored data.When the memory cell is not being accessed, power is not applied and the memory cells remain in their relaxed state, preserving their charge and allowing the data to be stored until it is accessed. This process is known as “static RAM”, or SRAM.The MT29C2G24MAAAAKAMD-5 IT TR is a DDR4 SDRAM (Double-Data Rate synchronous Dynamic Random Access Memory). The device features an 8ns or 9.75ns access time, depending on the operating frequency, and can transfer data at up to 2133MHz. DDR4 also features “self-refresh” and “power down” modes for improved system performance and energy efficiency.

Conclusion

MT29C2G24MAAAAKAMD-5 IT TR is a highly efficient 2Gb DDR4 SDRAM with half-density (1Gb) stack technology. It has a wide range of applications in the computing, networking and storage industries and offers a maximum access time of 9.75ns at 1200MHz. The device employs a dynamic random access memory (DRAM) technology, allowing it to store data as charged particles on a substrate. Additionally, it features self-refresh and thermal-awareness modes for improved performance and energy efficiency.

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