MT29C2G24MAABAKAML-5 IT Allicdata Electronics
Allicdata Part #:

MT29C2G24MAABAKAML-5IT-ND

Manufacturer Part#:

MT29C2G24MAABAKAML-5 IT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH RAM 2G PARAL 153VFBGA
More Detail: FLASH - NAND, Mobile LPDRAM Memory IC 2Gb (128M x ...
DataSheet: MT29C2G24MAABAKAML-5 IT datasheetMT29C2G24MAABAKAML-5 IT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA
Base Part Number: MT29C2G24M
Description

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The MT29C2G24MAABAKAML-5 is a type of multi-level cell flash memory, which is widely applied in many IT areas due to its high performance of power efficiency and low power consumption. It is most commonly seen in embedded systems such as smartphones and tablets, as well as in solid state drives (SSDs) and other data storage products. This type of memory also has various applications in networking and communication systems.

Flash memory utilizes the flash storage technology to store information. It is non-volatile and can be used to store large amounts of data on a small physical device. The MT29C2G24MAABAKAML-5 has two major components—the control unit and the data array. The control unit is responsible for conducting data input and output, erasing, and programming. The data array is composed of the memory cells that store the data.

The physical structure of the MT29C2G24MAABAKAML-5 memory is organized as a matrix of cells. Each cell contains two single bit layers, each capable of storing one bit of data. The single bit layers can be programmed independently. This means that each cell can store two bits of data, a factor that can significantly increase the storage capacity of the memory.

Another distinguishing feature of the MT29C2G24MAABAKAML-5 memory is its ability to use the multi-terminal charge-trapping flash technology. This technology stores information by trapping electrons in the dielectric layers within the memory cells. The trapped electrons create an electrical charge that is used to represent the data stored in the cells. This technique has a number of advantages, including faster erase and write times, lower power consumption, and improved data retention.

The MT29C2G24MAABAKAML-5 memory is also able to leverage the error correction code (ECC) technology to improve the data integrity. This technology uses algorithms to detect and correct errors that occur when data is written to and read from the memory cells. This ensures that the data stored in the memory is always reliable and accurate.

The MT29C2G24MAABAKAML-5 memory is highly reliable and has a long expected lifespan. The memory is designed with a number of safety features that protect the data stored in the cells, including wear-leveling and advanced signal integrity measures. The memory also has an extensive temperature range, with an operating temperature between -40 and +85 degrees Celsius.

In conclusion, the MT29C2G24MAABAKAML-5 is a reliable and powerful multi-level cell flash memory, designed to deliver high performance and low power consumption in a range of IT applications. The memory utilizes the multi-terminal charge-trapping flash technology, which enables faster write and erase times than traditional memory. It also includes an error correction code to ensure data accuracy and a range of safety features to protect stored data from corruption. Finally, the memory has an impressive temperature range, making it suitable for a range of environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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