
Allicdata Part #: | MT29C4G96MAZBACKD-5EWT-ND |
Manufacturer Part#: |
MT29C4G96MAZBACKD-5 E WT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH RAM 4G PARAL 137TFBGA |
More Detail: | FLASH - NAND, Mobile LPDRAM Memory IC 4Gb (256M x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH - NAND, Mobile LPDRAM |
Memory Size: | 4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 137-TFBGA |
Supplier Device Package: | 137-TFBGA (10.5x13) |
Base Part Number: | MT29C4G96M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT29C4G96MAZBACKD-5 E WT application field and working principle
MT29C4G96MAZBACKD-5 E WT, is one of the application fields of memory. It refers to a type of non-volatile memory which is integrated as a single chip in which data can be stored without being lost. It is used in most electronic devices, from PCs and laptops to mobile phones, game consoles and other electronic products.
MT29C4G96MAZBACKD-5 E WT is a type of DRAM that stores data in capacitors instead of registers. Its main advantage over conventional DRAM is that it does not require a refresh current. As such, it is highly energy-efficient, allowing for longer battery life and better performance in applications such as servers and gaming systems.
The working principle of MT29C4G96MAZBACKD-5 E WT involves electric charges which are stored in capacitors. The memory chip consists of a network of capacitors and transistors that are connected to a control unit which is responsible for writing and reading data from the chip. The control unit also controls the addressing of data, as well as the rate at which data is written and read. The energy required to change the value of the capacitors is very low, allowing for high speed reading. Beyond this, the chip also incorporates error correction and smart memory algorithms to maintain data integrity.
These features make MT29C4G96MAZBACKD-5 E WT a perfect choice for applications that require higher memory density and lower power consumption such as servers and mobile devices. In addition, it is highly reliable and offers superior performance compared to other forms of DRAM. As such, it is increasingly being used in applications such as artificial intelligence, industrial robotics, semiconductors and other specialized applications.
In conclusion, MT29C4G96MAZBACKD-5 E WT is an advanced form of DRAM that offers energy efficiency, reliability and superior performance. Its main application areas include servers, mobile devices, artificial intelligence, industrial robotics and semiconductors. Its working principle involves the storing of electric charges in capacitors which are then controlled by a control unit.
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