MT29E128G08CECDBJ4-6:D Allicdata Electronics
Allicdata Part #:

MT29E128G08CECDBJ4-6:D-ND

Manufacturer Part#:

MT29E128G08CECDBJ4-6:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 132VBGA
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel ...
DataSheet: MT29E128G08CECDBJ4-6:D datasheetMT29E128G08CECDBJ4-6:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)
Description

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The MT29E128G08CECDBJ4-6:D is a two-die stack DRAM solution which is designed for use in very high speed applications such as gaming, graphics cards, embedded or server applications. It is one of the most versatile memories available due to its high speed performance and ability to store large amounts of data. This memory is a hybrid of a traditional DRAM architecture and an innovative new technology called LPDDR3 (Low Power Double Data Rate 3). It offers better performance than standard DRAM and is more power efficient, making it ideal for high performance applications.

The MT29E128G08CECDBJ4-6:D offers the performance of traditional SDRAM with the power efficiency and low latency of LPDDR3. It features an integrated single channel that can transfer data at up to 1600 Mbps, offering twice the speed of traditional DDR3. It also features an integrated low power mode that reduces power consumption when the system is idle. The memory also features an ultra wide data transfer interface which allows more data to be accessed at any given point in time, offering faster access times and improved performance.

The MT29E128G08CECDBJ4-6:D is a good choice for applications that require high throughput, low latency, and low power consumption. It is ideal for gaming systems, embedded devices, high performance graphics cards, and other high performance applications. Due to its high speed and low power consumption, it is becoming a popular choice for enterprise applications that require large amounts of data to be processed quickly.

The working principle of the MT29E128G08CECDBJ4-6:D is quite simple. It utilizes an integrated single channel to transfer data at a high speed of transferring up to 1600 Mbps, while also offering a low power mode. This allows the memory to quickly transition between active and idle states to conserve power and reduce latency. This also allows the memory to process more data at any given point in time.

The MT29E128G08CECDBJ4-6:D is a good memory solution for applications that require high throughput, low latency, and low power consumption. It is the ideal choice for gaming systems, embedded devices, high performance graphics cards, and other applications that require large amounts of data to be processed quickly. Its integrated single channel can transfer data at up to 1600 Mbps, providing twice the speed of traditional DDR3. It also features an integrated low power mode to reduce power consumption when the system is idle, while also providing improved performance.

The specific data is subject to PDF, and the above content is for reference

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