MT29E2T08CTCCBJ7-6:C Allicdata Electronics
Allicdata Part #:

MT29E2T08CTCCBJ7-6:C-ND

Manufacturer Part#:

MT29E2T08CTCCBJ7-6:C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 2T PARALLEL 167MHZ
More Detail: FLASH - NAND Memory IC 2Tb (256G x 8) Parallel 167...
DataSheet: MT29E2T08CTCCBJ7-6:C datasheetMT29E2T08CTCCBJ7-6:C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Description

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Memory is an important part of a computing system, as it helps to store and access data. One of the most popular kinds of memory used today is MT29E2T08CTCCBJ7-6:C. This memory has various applications in computing and has a working principles associated with it.

Applications of MT29E2T08CTCCBJ7-6:C

MT29E2T08CTCCBJ7-6:C is an 8Gbit (1GB) Multi-Level Cell (MLC) NAND Flash technology, which is often used in embedded systems. It has great characteristics such as low power consumption and improved performance, making it ideal for use in mobile devices, cameras, and other handheld gadgets. It is suitable for applications that require fast data access, random writing, and large capacity storage. It is also preferred for applications with high storage density, such as photos and videos.

Apart from its use in handheld devices, MT29E2T08CTCCBJ7-6:C can also be used in large-scale data centers where its low power consumption can save money and energy.

Working Principle of MT29E2T08CTCCBJ7-6:C

MT29E2T08CTCCBJ7-6:C utilizes MLC technology, which allows it to store two bits of data in one memory cell. This type of memory is divided into two pages – each page consists of five planes of memory cells. All the planes have to be written and read together, which helps to achieve improved performance. Moreover, the data can be written and read in any order, allowing for random access to data.

The random writing capability of MT29E2T08CTCCBJ7-6:C is provided by Error Correction Code (ECC) technology, which helps to detect and correct errors. This also allows for reliable data storage and improved reliability. For improved performance, the memory utilizes a serial interface that connects the memory cells directly to the pins on the IC, which makes data transfer faster and more efficient.

Overall, MT29E2T08CTCCBJ7-6:C is a reliable and efficient memory technology that performs great in embedded devices and data centers. Its random writing capability, improved performance, and low power consumption make it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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