MT29E384G08EBHBBJ4-3:B

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Memory

The MT29E384G08EBHBBJ4-3:B is a high-performance 3D NAND non-volatile memory. This DDR4 device is a 384-GB memory device that stores 3 terabytes of data. It offers extraordinary read and write speeds, making it the perfect choice for data storage applications that require fast and reliable access to data.

This memory device offers several advantages over other storage technologies, including its speed, energy efficiency, and durability. Since it is manufactured with advanced manufacturing processes, it can withstand environmental extremes, making it ideal for harsh operating environments. It also offers a wider range of storage capacities than other memory solutions and is compatible with a variety of devices.

The MT29E384G08EBHBBJ4-3:B is well-suited to a variety of application fields. It can be used in embedded systems for protection against power instability, fast operations, and safe data storage. It is also used in automotive applications for high-speed data transfer and can also be used as an enterprise storage solution for robust data protection.

The device also offers an outstanding working principle. All commands are sent to the device using an I2C parallel bus, and then the requested data is transferred from the non-volatile memory to a RAM buffer. If the data has not been written yet, it is first written in the SLC block, and then in the MLC block. This ensures that data is kept safe even if power is lost. When the read or write command is completed, the device sends out an acknowledgement signal. This ensures that data reads and writes can be completed quickly and reliably.

The MT29E384G08EBHBBJ4-3:B thus offers an excellent selection of features and characteristics that make it an ideal choice for a range of applications. Not only is it an incredibly fast and reliable storage solution, but it also offers energy efficiency and durability. And it is also compatible with a wide range of devices, which makes it a great choice for any type of data storage application.

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