
Allicdata Part #: | MT29E768G08EEHBBJ4-3:B-ND |
Manufacturer Part#: |
MT29E768G08EEHBBJ4-3:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 768G PARALLEL 333MHZ |
More Detail: | FLASH - NAND Memory IC 768Gb (96G x 8) Parallel 33... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 768Gb (96G x 8) |
Clock Frequency: | 333MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.5 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IntroductionMT29E768G08EEHBBJ4-3:B is an advanced memory component manufactured by Micron Technology. This component provides a wide array of features, such as increased storage capacity, improved signal-to-noise ratios, and enhanced data security. As a result, this component is suitable for use in a variety of applications.
Application Field
MT29E768G08EEHBBJ4-3:B is an ideal component for memory storage applications. It is used in a variety of storage applications such as storage of software, images, audio, and video. It is also used for the storage of encrypted data and for other security purposes. The component is also used in smart cards, gaming consoles, embedded systems, and communication networks.
Working Principle
MT29E768G08EEHBBJ4-3:B operates on the principle of connected Flash cells. This component consists of 192 Flash cells, each with a data capacity of 64KB. The cells are connected in a memory array and are organized in bits and bytes. The cells are arranged in an ordered fashion and are connected to a controller. The controller is responsible for controlling the data flow through the cells. The controller communicates with the cells via address, data and control lines. All the address, data and control lines are connected to the controller. The controller uses the data lines to send and receive data, while the control lines are used to send commands to the cells.
Advantages
MT29E768G08EEHBBJ4-3:B has several advantages over other types of memory components. It is a very reliable component and has a long life since it is made from high quality materials. It is also very energy efficient and consumes less power than other components. Furthermore, it is fast and has a high data transfer rate. The component is also highly secure since it has been designed with an enhanced data security feature. Additionally, it is highly scalable and can be used for large storage applications.
Conclusion
MT29E768G08EEHBBJ4-3:B is an advanced memory component manufactured by Micron Technology. It is suitable for use in a variety of memory storage applications such as storing software, images, audio, and video. It operates on the principle of connected Flash cells and has several advantages, including reliability, energy efficiency, and high data transfer rate. The component is also highly secure and scalable, making it an ideal choice for a wide range of memory storage applications.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MT29" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT29F1G08ABBDAH4:D | Micron Techn... | -- | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F64G08CFACBWP-12:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
MT29F256G08CMCABH2-10Z:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F512G08CUCDBJ6-6R:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
MT29E1T08CMHBBJ4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29E768G08EEHBBJ4-3ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 768G PARALLEL 33... |
MT29F1T208ECCBBJ4-37:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
MT29TZZZ4D4BKERL-125 W.94M TR | Micron Techn... | 0.0 $ | 1000 | MCP 4GX8/128MX32 PLASTIC ... |
MT29F1T08CPCBBH8-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1G08ABAEAWP:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F2G08ABAEAH4-E:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F16G08ABABAWP-AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL TSO... |
MT29F2G01ABAGDSF-IT:G | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI SOICFLASH... |
MT29TZZZ8D5JKEZB-107 W.95Q | Micron Techn... | 0.0 $ | 1000 | MLC EMMC/LPDDR3 72GMemory... |
MT29F1G08ABBEAM68M3WC1 | Micron Techn... | 0.0 $ | 1000 | SLC 1G DIE 128MX8Memory I... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F1G16ABBEAH4-ITX:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29C4G96MAAHBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 4G PARAL 137... |
MT29F1T08CPCABH8-6:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 166M... |
MT29F256G08CJAAAWP-ITZ:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
MT29F16G08CBECBL72A3WC1P TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL WAF... |
MT29F4G16ABADAM60A3WC1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL WAFE... |
MT29F1T08CQCBBG2-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1T08CUCBBH8-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F384G08EBHBBJ4-3RES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 384G PARALLEL 33... |
MT29F1T08EMHAFJ4-3RES:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29F256G08CECEBJ4-37ITRES:E TR | Micron Techn... | 0.0 $ | 1000 | MLC 256G 32GX8 VBGA IT DD... |
MT29F1G08ABAEAWP-IT:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F256G08AUCABH3-10IT:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F32G08AFACAWP-IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F1G08ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F16G08ABACAWP-Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F16G08ABACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F1T08CUCABK8-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29E2T08CUHBBM4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
MT29F256G08CMEDBJ5-12IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
MT29F2T08CVCCBG6-6C:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
MT29F128G08AKEDBJ5-12:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 13... |
MT29F32G08ABCDBJ4-6ITR:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 166... |
Latest Products
MT53D512M64D4NZ-053 WT ES...
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

ECF620AAACN-C1-Y3-ES
LPDDR3 6G DIE 192MX32Memory IC

MT53B384M64D4NK-053 WT ES...
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

70V25S45J
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

71321LA55JI8
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

7027L55PFI8
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
