MT29F128G08AMCABH2-10ITZ:A TR Allicdata Electronics
Allicdata Part #:

MT29F128G08AMCABH2-10ITZ:ATR-ND

Manufacturer Part#:

MT29F128G08AMCABH2-10ITZ:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 100TBGA
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 10...
DataSheet: MT29F128G08AMCABH2-10ITZ:A TR datasheetMT29F128G08AMCABH2-10ITZ:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (12x18)
Base Part Number: MT29F128G08
Description

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The MT29F128G08AMCABH2-10ITZ is a memory device commonly used in Smartphones and consumer electronics. As such, it is classified as a type of memory device, with certain features that differentiate it from others in the same category. This article will discuss the application field and working principle of MT29F128G08AMCABH2-10ITZ and provide a more detailed understanding of the device.The MT29F128G08AMCABH2-10ITZ is a multi-plane NAND flash memory device geared towards consumer, mobile and automotive applications. Its advantage over traditional NAND memory devices is its increased capacity, which is fueled by its multiple planes of data storage. This allows the device to store data more efficiently, resulting in a smaller memory form factor and a more cost-effective product.The MT29F128G08AMCABH2-10ITZ operates on the NAND gate architecture, which consists of NAND gate transistors (NANDs) to control the activation and deactivation of the conductive path. The NAND gate architecture is a relatively simple and straightforward design, which begins with the introduction of a NAND gate array to the system. The NAND gate array consists of two NAND gates connected in series. The NAND gates are configured such that when the input voltage is applied, the current path is closed, allowing for data transfer between the memory device and its accompanying components. When the current is released, the NAND gates are then opened, disconnecting the data transfer path and permitting the operations to continue. The MT29F128G08AMCABH2-10ITZ is also built with an advanced error detection and correction (EDC) system, which helps prevent data corruption in the event of internal failures. This is done by using an Error Correction Code (ECC) algorithm to generate a parity sequence of data bits that is then compared with the original data sequence. If the parity and data sequences are not the same, then the ECC will then report that some type of an error has occurred and consequently retrieve the original bit sequence to repair the data. The MT29F128G08AMCABH2-10ITZ is typically used in mobile and consumer applications, such as smartphones and tablets. In these scenarios, it is used to store data from the operating system, applications and user data, allowing users to use their devices in a more efficient and reliable manner. Overall, the MT29F128G08AMCABH2-10ITZ is a reliable multi-plane NAND flash memory device that is ideal for mobile and consumer applications. Its advantages include a large storage capacity, an easy to use system architecture, and an efficient and accurate error detection and correction system. Through the use of these features, the MT29F128G08AMCABH2-10ITZ is able to optimize its data storage capabilities and provide users with reliable and efficient performance.

The specific data is subject to PDF, and the above content is for reference

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