
Allicdata Part #: | MT29F128G08CBCABH6-6M:ATR-ND |
Manufacturer Part#: |
MT29F128G08CBCABH6-6M:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128G PARALLEL 166MHZ |
More Detail: | FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 16... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 128Gb (16G x 8) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
MT29F128G08CBCABH6-6M is a single-tier DDR3 DRAM that is designed to deliver excellent performance for a wide variety of applications. This type of DRAM is used in a large number of computing, graphics, and storage applications. It is very important to understand the architecture and operation of MT29F128G08CBCABH6-6M in order to achieve maximum performance from the device.
Memory architecture
MT29F128G08CBCABH6-6M is a single-tier DDR3 DRAM that is composed of four 16-bit I/O Banks operating at a maximum data rate of 667 MHz. Each bank contains eight memory banks. Each memory bank is composed of eight components containing eight pages each, making a total of 64 pages per bank. The I/O Banks are connected to a main System Bus which can reach a maximum transfer rate of 4.1 Gbps.
The memory architecture is designed to provide maximum performance and reliability. To ensure this, each I/O Bank and each memory bank is protected by a redundant ECC error detection and correction module. In addition, MT29F128G08CBCABH6-6M has an integrated Low-power self-refresh mode that allows the device to switch to a low power mode when idle or inactive and then be enabled again when data is required. This feature helps save power and extend battery life.
Memory access
When accessing MT29F128G08CBCABH6-6M, the host begins by sending an operation to the controller. The controller then handles the data access, mapping the address and operation to the appropriate I/O Banks and generating the appropriate row/column cycles. As the data is transferred from the I/O Banks to the System Bus, the controller also checks and corrects any errors that may have occurred.
When the host signals that the data is no longer needed, the controller sends the appropriate signal to the memory banks to write the data to the necessary pages. The controller then sends the signal to the I/O Banks to close the appropriate pages. The exact timing and order of operations is determined by the controller and is optimized for maximum performance.
Application Field
MT29F128G08CBCABH6-6M is a versatile memory device that can be used in a wide variety of applications. The device is ideal for graphics and gaming, storage, and High-Performance Computing (HPC) applications, thanks to its cutting-edge design and reliability.
The device is also suitable for embedded-systems including networking, industrial, medical, and aerospace applications, as well as consumer-electronic products such as digital cameras, smartphones, and tablet PCs. It is particularly well-suited for these applications thanks to its Low-power self-refresh mode, which helps preserve power while not compromising performance.
Conclusion
MT29F128G08CBCABH6-6M is a powerful single-tier DDR3 DRAM device that offers excellent performance and reliability for a variety of applications. Its memory architecture provides maximum stability and performance, while its low-power self-refresh mode enables long-term operation in battery-operated systems. In addition, the device is ideal for a wide range of high-end applications including HPC, graphics, and storage applications.
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