MT29F128G08CBCBBH6-6ITC:B

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The MT29F128G08CBCBBH6-6ITC:B has become a recognizable and respected solution for many memory applications. It is a non-volatile single-level cell FLASH memory, also known as NAND Flash memory, that offers an ultra-low power and cost-effective, extremely reliable, robust and compact storage solution for embedded and enterprise applications.

The MT29F128G08CBCBBH6-6ITC:B is a type of memory storage device. It is composed of a series of memory cells arranged in columns and rows. Each cell stores one bit of data, either 0 or 1, depending on the resistance of the cells. The data can be read or written to the device by controlling the cells through a logic interface. It is a non-volatile type of memory, so the data is retained even when the power is switched off.

The MT29F128G08CBCBBH6-6ITC:B is based on NAND architecture, and features a dynamic, on-board ECC for improved data protection. It is an extremely reliable and robust storage solution, allowing a maximum of more than 10K program/erase cycles, and offering an ultra-low power and cost-effective solution for embedded and enterprise applications. It is well suited for a variety of embedded applications such as automotive, industrial, consumer and multimedia, as well as for many enterprise applications such as server and storage systems, data centers and networking.

The MT29F128G08CBCBBH6-6ITC:B is designed to provide a cost-effective and efficient way to store data with a fast reading speed at low voltage. It boasts a fast program time of 2ms/page and a fast read time of 20us/page at 1.5V, making it an ideal choice for memory intensive applications. Its small package size (26mm x 19.5mm x 1.8mm) ensures a highly compact motherboard design and minimal footprint, making it an ideal solution for embedded applications.

The MT29F128G08CBCBBH6-6ITC:B is an incredibly capable and reliable memory device that offers an ultra-low power and cost-effective storage solution for embedded and enterprise applications. It has a fast program and read time, dynamic on-board ECC for improved data protection, and a small package size for a highly compact design. All of these features combine to make it an excellent choice for a wide range of memory applications.

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