
Allicdata Part #: | MT29F128G08CBCEBJ4-37:ETR-ND |
Manufacturer Part#: |
MT29F128G08CBCEBJ4-37:E TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128G PARALLEL 267MHZ |
More Detail: | FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 26... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 128Gb (16G x 8) |
Clock Frequency: | 267MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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Memory, being the repository of data, is a critical component in any computing system. The MT29F128G08CBCEBJ4-37:E TR memory is a type of non-volatile memory that stores data even when the power is turned off. It is an ideal choice for applications with high storage space requirements. This article looks at its application field, as well as its working principle.
Application Fields
The MT29F128G08CBCEBJ4-37:E TR memory is mainly used for applications such as automotive, audio, and video recording systems, as well as for embedded devices and System-on-Chip (SOC) systems. It is also used for General Purpose NAND Flash, Coprocessor, Image Sensor, and Graphics Accelerator applications.
The MT29F128G08CBCEBJ4-37:E TR memory is suitable for a wide range of applications, including those that require high storage space and fast read/write speeds. It can also be used for image storage and recovery, data encryption and HDD storage. Moreover, its high data density ensures that a large amount of data can be stored in a small space.
Working Principle
The MT29F128G08CBCEBJ4-37:E TR memory is a type of NAND Flash Memory, and it uses solid state technology to store data. This type of memory uses floating gate transistors that are connected in a series and can be programmed electronically. It is a non-volatile type of memory, which means that the data stored in it is retained even when the power is turned off.
The memory controller is responsible for controlling access to and from the NAND Flash memory. The controller is responsible for reading, writing, erasing and verifying the data stored in the memory, as well as for providing addressing information. Additionally, the controller ensures that the operations are performed in a predetermined order and that data is not corrupted.
When data is to be written to the MT29F128G08CBCEBJ4-37:E TR memory, the memory controller commands the memory device to pre-erase the area where the data is to be written. Then it sends the data to be written, as well as the address where the data should be stored. When data is to be erased, the memory controller sends a command to the memory device to erase the area where the data is stored.
The MT29F128G08CBCEBJ4-37:E TR memory has a robust and reliable design which makes it suitable for a wide range of applications, from automotive and audio/video recording systems to embedded applications and System-on-Chip (SOC) systems. Its non-volatile type of memory ensures that the data stored in it is retained even when the power is turned off. In addition, its high data density allows for a large quantity of data to be stored in a relatively small space.
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