MT29F128G08CBECBH6-12:C TR

Memory: MT29F128G08CBECBH6-12:C TR

The MT29F128G08CBECBH6-12:C TR is a type of memory related hardware component. It is a DDR3 type of SDRAM most often used in the form of a 144-pin Unbuffered Dual In-line Memory Module (UDIMM).

The memory module has 8 GB of data storage capacity and is often referred to as a 2Rx8 configuration, which means that it has 2 ranks and 8 memory banks. It is designed for use in multiple forms including desktop PCs, servers, infrastructure devices, and embedded applications. It is also used in some laptop computers. It is widely used in applications like memory-mapped I/O, caching, and storage solutions.

Working principle: The MT29F128G08CBECBH6-12:C TR employs the DDR3 standard of DRAM. It communicates via 16-bit data channels and is able to supply higher speed data transfer options within a certain range. The memory module is ideally built for system-level architectures that require good memory performance and energy efficiency. It is designed to support the maximum transfer rate of 1600 Mt/s. It operates using a voltage range of between 1.35V and 1.5V.

The memory module leverages its onboard SPD (Serial Presence Detect) EEPROM to keep track of the module\'s configuration. This includes its capacity, speed, signal levels and other pertinent information. It offers support for error correction and thermal monitoring during operation. The UEFI (Unified Extensible Firmware Interface) BIOS settings are supported by the memory to help optimize the performance of the system in which it is used.

The memory module supports address and command parity to ensure data integrity. It is able to handle address and command transactions such as reads, writes, and other operations. In order to ensure data security, the module supports ECC (Error Correction Code) and advanced error protection (AEP). The AEP feature is designed to detect and correct single-bit errors that may occur during the communication process.

In terms of performance, the module is designed to provide good quality operation over the entire range of applications. It has an extensive range of features, such as burst lengths of 8, 4, and 2, On Die Termination (ODT) for improved signal integrity, and a Partial Array Self Refresh (PASR). The Memory module is designed to operate within a range of temperature and voltage parameters in order to ensure its stability and performance.

The module is also designed to take advantage of certain modern technology improvements. This includes support for the new generation Intel Core processors. The memory also includes provisions for power conservation with low power consumption in standby mode and as well as low profile components and mounting heights.

The MT29F128G08CBECBH6-12:C TR Memory module not only has good performance qualities, but also competitive in terms of price. It is available in the market, and can be easily obtained in the form of an all-in-one solution including all the necessary parts for the memory module installation.

In conclusion, the MT29F128G08CBECBH6-12:C TR Memory module is an ideal choice for a variety of applications, from desktop PCs to servers. Its extensive range of features, along with its competitive price point, make it a viable option for anyone looking for a high performance memory system.