MT29F128G08CECDBJ4-6ITR:D TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT29F128G08CECDBJ4-6ITR:D TR Application Field and Working Principle

MT29F128G08CECDBJ4-6ITR:DTR is a 3D triple-level cell (TLC) NAND Flash memory, which is part of Micron’s highly reliable, high-performance and cost-effective memory solutions.It is an ideal memory storage and logic solution for System-on-Chip (SoC) designs, enabling designers to quickly and cost-effectively integrate a wide range of memory and non-memory functions onto the same die.

Application Field

MT29F128G08CECDBJ4-6ITR:DTR is suitable for a range of memory-intensive applications that demand high performance, low latency and excellent power-to-performance ratio. It has been designed for applications such as digital cameras and gaming consoles, as well as for high volume mobile applications such as ultra-mobile PCs, mobile phones and tablets.

The device also offers increased densities (up to 128Gbit of density) and flexibility, allowing system architects to select the best available memory options. The improved scalability of the chip ensures that it can easily meet the needs of any target application, regardless of the size or complexity.

Working Principle

The MT29F128G08CECDBJ4-6ITR:DTR uses a feature called Write-leveling technology that accounts for the differences in manufacturing process variation. This technology allows the device to fine-tune to a stringent performance requirement by monitoring and measuring the write performance at multiple discrete points in time.

The device operates on a multiplexed command, address and data bus structure, which enables the device to transfer information between memory and the processor in an efficient and reliable manner. The device supports Asynchronous and Selectable On-Die-Termination (ODT) modes, which can be used to greatly reduce system power consumption. The device also has an excellent power-down mode, which allows the device to significantly reduce power consumption during idle periods.

The device incorporates a high-speed sophisticated Error Correction Code (ECC) engine, which helps guard the integrity of the stored data. The device also has a temperature sensor, which lets the device understand the operational environment and adjust internal settings accordingly, giving the device more reliable operation and improved reliability.

The MT29F128G08CECDBJ4-6ITR:DTR also utilizes cutting edge NAND Flash technology such as Multi-Level Cell (MLC) and 3D Triple-Level Cell (TLC). By employing these technologies, the device is able to offer excellent density, reliable data storage, and robust error correction capability. The device also supports page and block erase operations, which enable the device to quickly and reliably program and erase data, as well as high speed random read and write operations.

Conclusion

MT29F128G08CECDBJ4-6ITR:DTR is a highly advanced, high-performance memory offering from Micron. The device combines 3D TLC NAND Flash, Write-leveling technology, Asynchronous and Selectable ODT, and Error Correction Code engine to provide superior levels of performance, reliability and power-saving features. Its combination of memory and logic features makes it ideal for mobile, digital camera and gaming console applications, as well as for high volume storage applications.

The specific data is subject to PDF, and the above content is for reference