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Memory Technology

The MT29F128G08CEEDBJ4-12IT:D is an embedded multi-level cell NAND Flash memory device and belongs to the memory technology family. The device is specifically designed for high performance applications, with a write speed of up to 34MB/second and a read speed of up to 80MB/second, making it one of the faster memory device available. It is ideal for memory intensive applications such as mass storage devices, where performance is a priority.

Characteristics

The MT29F128G08CEEDBJ4-12IT:D memory device comes with a few specific characteristics which differentiate it from other devices available in the market. It has a maximum storage capacity of 128GB, making it perfect for large high-performance storage systems. It also has an error correction code (ECC) engine that is capable of reducing read errors to a minimum and increasing data accuracy. The device also supports wear-leveling and advanced garbage collection algorithm that helps to maintain data integrity and prevent data loss due to wear and tear. Additionally, the device has advanced features such as double page programming and copyback that increase programming throughput, while concurrently lowering power consumption.

Application Fields

The MT29F128G08CEEDBJ4-12IT:D is ideal for use in applications that require robust high-performance memory and are suitable for embedded applications such as digital signage, medical devices, gaming consoles, portable navigation systems, automotive infotainment systems and industrial automation. These devices also perform well in applications within the enterprise storage space, including client/server RAID controllers, cloud storage and enterprise storage products.

Working Principle

The MT29F128G08CEEDBJ4-12IT:D uses traditional NAND Flash technology where each memory cell contains two bit cells which can be programmed to store a 0 or 1. Programming is done by applying a voltage in order to inject electrons into the floating gate. The device uses a multi-level cell (MLC) architecture, allowing multiple bits of data to be stored in each cell. This results in larger density and lower power consumption compared to SLC (single level cell) architectures. The device also features a specially designed wear-leveling algorithm and a garbage collection algorithm that helps to improve data integrity and increase cell lifespan.

The device also uses an advanced ECC system to improve data accuracy and reduce the rate of read errors. The ECC system uses a special algorithm to calculate a 16-bit error correction code for each 128-byte data block. The code is attached to the data before being written to the memory device and is used to correct up to 8 bit errors. As part of the ECC algorithm, data blocks in memory are also verified periodically to detect any errors that may have occurred between ECC verification steps.

The device also supports advanced features such as double page programming and copyback which helps to optimize performance. Double page programming allows for faster writing to the device using less power, while copyback enables data to be read from one page and written to another in a single action, effectively reducing the number of program cycles. Both features help to improve the performance of the memory device while also reducing power consumption.

Conclusion

The MT29F128G08CEEDBJ4-12IT:D is a high-performance NAND Flash memory device that is suitable for embedded and enterprise storage applications due to its high storage capacity, speed and advanced features such as ECC, wear-leveling and double page programming. These features make the device a good choice for applications that require robust memory performance and reliability.

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