Series:	--
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	128Gb (16G x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT29F128G08EBEBBB95A3WC1-M Application Field And Working Principle

Introduction

The MT29F128G08EBEBBB95A3WC1-M is a product of Micron Technology, Inc. and falls into the category of memory. The MT29F128G08EBEBBB95A3WC1-M is a Flash memory device, and it is manufactured using Micron\'s class-leading 28nm process and 3D NAND technology. The MT29F128G08EBEBBB95A3WC1-M offers features such as high density, low power consumption, high performance and a wide range of operating temperature ranges. As an industry-leading device, it offers maximum reliability and data integrity for today\'s ever-changing applications.

Application Field

The MT29F128G08EBEBBB95A3WC1-M is designed for a wide range of applications, from personal electronics to automotive infotainment systems. Its features make it an ideal choice for applications requiring high-performance, high-density storage solutions. The MT29F128G08EBEBBB95A3WC1-M supports a variety of memory modes and bus interfaces, making it an excellent choice for embedded applications including industrial and automotive applications.One of the main application fields of the MT29F128G08EBEBBB95A3WC1-M is automotive infotainment systems, where it serves as an ideal solution for data storage and data transfer needs due to its ultra-fast read/write speeds and wide range of operating temperature ranges. By storing critical data in the automotive system, it ensures maximum reliability even in the harshest of environments.Another application field where the MT29F128G08EBEBBB95A3WC1-M excels is in medical systems and other health related applications, where its fast read/write speed and low power consumption provide a reliable and energy-efficient storage solution. Moreover, the MT29F128G08EBEBBB95A3WC1-M features a wide range of operating temperature ranges, making it ideal for use in the medical and health industries.

Working Principle

The MT29F128G08EBEBBB95A3WC1-M device is a NAND type Flash memory, which stores data in cells made up of floating-gate transistors. These floating-gate transistors act as a buffer between the source (data line) and the drain (control line), which allows electrical current to flow between the two.In order to write or access data in the MT29F128G08EBEBBB95A3WC1-M, the charge is applied to the cell in a specific way based on the voltage that is applied to the floating-gate transistors. When a voltage is applied, the charge from the floating-gate transistors can either be erased or written depending on the voltage.In order to store and retrieve data, the MT29F128G08EBEBBB95A3WC1-M is organized in blocks and pages. Blocks are made up of multiple rows, and each row is made up of multiple pages. Each block can be written or read in multiple pages, and each page contains up to 64kB of data.

Conclusion

The MT29F128G08EBEBBB95A3WC1-M Flash memory device is a leading memory solution due to its reliable, high performance and low power consumption. Its features make it suitable for a wide range of applications, from personal electronics to medical and automotive infotainment systems. The device is organized into blocks and pages, and stores and retrieves data using a voltage applied to the floating-gate transistors.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description