MT29F16G08ABACAM72A3WC1 Allicdata Electronics
Allicdata Part #:

MT29F16G08ABACAM72A3WC1-ND

Manufacturer Part#:

MT29F16G08ABACAM72A3WC1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 16G PARALLEL WAFER
More Detail: FLASH - NAND Memory IC 16Gb (2G x 8) Parallel
DataSheet: MT29F16G08ABACAM72A3WC1 datasheetMT29F16G08ABACAM72A3WC1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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The MT29F16G08ABACAM72A3WC1 is classified under the memory category. This memory technology is widely used in several applications because it has the ability to store large amounts of data reliably. It has superior reading, writing and erasing capabilities that ensure data integrity.

The MT29F16G08ABACAM72A3WC1 is constructed around NAND flash technology. The memory cells in this type of memory module can hold either one or two bits of information, known as multi-level storage cells. Since these cells are composed of 1T1T1T1T1T topology, it allows the multi-level cells to store more than one bit of information at a time.

The access speed for the MT29F16G08ABACAM72A3WC1 is 15μs per page. This fast access time helps ensure that data can be quickly transferred to and from the memory module. It also has an endurance rating of 10,000 erases per block. This means that the memory can be reused multiple times over a long period of time without suffering any data loss.

The memory module works in a three-layer chip construction. The first layer is the controller. This controller is responsible for controlling the flow of data between the device and the memory chip. The second layer is the control layer, which provides the interface between the device and the memory module. The third layer is the memory array, which contains the cells and the controller.

The MT29F16G08ABACAM72A3WC1 provides advanced manageability features to help users more efficiently manage their data. It supports write protection and wear-leveling techniques that help reduce data loss due to power spikes or other external events. It also supports error correction code (ECC) to ensure data integrity.

The MT29F16G08ABACAM72A3WC1 is ideal for use in a variety of applications requiring reliable data storage. It is used in portable devices such as digital cameras, digital video recorders, and other media tools. It is also used in embedded applications such as industrial automation, medical devices, and automotive applications. This memory module is also used in server storage systems, set-top boxes, digital video recorders, etc.

The MT29F16G08ABACAM72A3WC1 works using the principle of allowing data cells to store both bits of data and allowing them to be re-written easily. This is done by using floating-gate transistors that allow electrons to move from one area to another without the need for an electrical pulse. It then uses a method of trapping those electrons in a "gate potential" within the memory cell. This gate potential is responsible for distinguishing between the two bits of data in the memory cells, allowing them to be read and written.

Overall, the MT29F16G08ABACAM72A3WC1 has been designed to meet the data storage requirements of a variety of applications. Its fast access time and efficient data management capabilities help users manage their data with ease and reliability. With its advanced manageability features and its reliable and fast access time, users can trust that the MT29F16G08ABACAM72A3WC1 will meet their data storage requirements for years to come.

The specific data is subject to PDF, and the above content is for reference

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