MT29F16G08ABACAWP-ITZ:C Allicdata Electronics
Allicdata Part #:

MT29F16G08ABACAWP-ITZ:C-ND

Manufacturer Part#:

MT29F16G08ABACAWP-ITZ:C

Price: $ 21.17
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 16G PARALLEL 48TSOPFLASH - NAND Memory IC...
More Detail: N/A
DataSheet: MT29F16G08ABACAWP-ITZ:C datasheetMT29F16G08ABACAWP-ITZ:C Datasheet/PDF
Quantity: 2000
1 +: $ 21.17000
10 +: $ 20.53490
100 +: $ 20.11150
1000 +: $ 19.68810
10000 +: $ 19.05300
Stock 2000Can Ship Immediately
$ 21.17
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Clock Frequency: --
Write Cycle Time - Word, Page: --
Access Time: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: MT29F16G08
Description

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Memory is an essential part of almost all machines and systems today. Memory is used to store information, including but not limited to system configuration, program instructions and data. Different types of memory have different uses and performance trade-offs. One popular type of memory is MT29F16G08ABACAWP-ITZ:C, which is used in a wide range of applications.

MT29F16G08ABACAWP-ITZ:C is a type of non-volatile memory, which means it can retain stored data even when power is not supplied. It is most commonly used in devices that need a high degree of reliability, such as digital cameras, medical devices, and automotive systems. It is also used in a variety of consumer electronics applications, such as smart cards, personal digital assistants and GPS receivers.

MT29F16G08ABACAWP-ITZ:C is a multi-level cell (MLC) type of flash memory. In MLC memory, each memory cell can store two or more bits of data. This allows for higher storage capacity and higher cell densities, as well as higher write and erase speeds. Additionally, because of its MLC architecture, MT29F16G08ABACAWP-ITZ:C is able to read and write data faster than other flash memory types.

MT29F16G08ABACAWP-ITZ:C can also operate at both lower and higher frequencies, allowing it to be easily used in a wide range of applications. Additionally, this type of memory is highly reliable, with data retention times of up to 10 years, and read and write endurance rates of up to 104,000 cycles.

The working principle of MT29F16G08ABACAWP-ITZ:C is similar to other types of memory. Data is stored in cells, which are divided into two main components: a control gate and a floating gate. When a cell is “writing” data, a current is applied to the control gate, which turns on the cell and allows “programming”, or writing. When a cell is being “read”, a voltage is applied to the control gate and the current that passes through the control gate reads the data stored in the cell.

Once a cell has been written or read, it must be erased before it can be used again. Erasing is done by applying a voltage to the floating gate, which causes electrons to be released, thus erasing the stored data. MT29F16G08ABACAWP-ITZ:C can be erased up to 10,000 times before any errors begin to occur.

In conclusion, MT29F16G08ABACAWP-ITZ:C is a highly reliable type of memory that is used in a variety of applications, from digital cameras to automotive systems. It is a multi-level cell type of flash memory, which allows for higher storage capacity and faster data read and write speeds. Additionally, it has long data retention times and is able to be erased up to 10,000 times without errors occurring. Understanding the working principle of MT29F16G08ABACAWP-ITZ:C is essential for users who need to implement reliable memory in their applications.

The specific data is subject to PDF, and the above content is for reference

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