MT29F16G08ABCCBH1-10:C

Memory

The MT29F16G08ABCCBH1-10:C is a non-volatile Flash memory from Micron’s line of products. This type of memory is well known for its fast read and write performance and low power consumption, making it a popular choice for various applications.

Application Field

This type of memory is especially suitable for applications with high-speed data transfer and storage. It is most popularly used in tablets and smartphones due to their need to store large amounts of data while consuming less power. The memory can also be used in digital cameras and DSLR cameras to store images or videos and provide faster read/write speeds. Additionally, it is often found in portable media players, digital audio players, and automotive electronics.

Working Principle

The MT29F16G08ABCCBH1-10:C Flash memory uses a charge-trap cell architecture, allowing it to store information in a non-volatile manner. This cell architecture is based on the concept of trapping electrons in the charge-trap layer. This layer acts like a sponge, allowing the electrons to accumulate and remain stable in the memory until the next read/write operation. This charge-trap cell architecture also allows for faster data read/write speeds and lower power consumption.

The memory also employs a double-bit error correction system (DrivE ECC), which is designed to detect and correct single bit errors. This error correction system is important because it ensures the accuracy of data stored in the chip, protecting it from corruption. The memory has a synchronous clock, which allows it to operate at higher speeds and minimize power consumption.

The MT29F16G08ABCCBH1-10:C Flash memory also features an advanced command interface, making it compatible with a wide range of systems. The interface allows for easy platform integration and increases the level of integration between the memory and system host. This helps to reduce the number of wires and components required for the system.

Conclusion

The MT29F16G08ABCCBH1-10:C Flash memory is an ideal choice for applications that require fast read/write speeds and low power consumption. Its charge-trap cell architecture and advanced command interface make it suitable for a wide variety of applications, such as tablets, smartphones, digital cameras, and automotive electronics. Its double-bit error correction system also helps to protect data stored in the memory from corruption.