MT29F16G08AJADAWP:D

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	16Gb (2G x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	MT29F16G08

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Introduction to the MT29F16G08AJADAWP:D Memory

The MT29F16G08AJADAWP:D is a 2Gb NAND flash memory device manufactured by Micron. It is part of the MT29F family of products, which includes both NAND and NOR memory devices. The MT29F16G08AJADAWP:D is an example of the latest NAND flash technology available. This device offers increased storage capacity, high speed and improved power efficiency compared to the previous MT29F series devices.

Application Field

The MT29F16G08AJADAWP:D is primarily used in mobile embedded systems, such as camcorders, digital cameras, PDAs, smartphones, and other mobile devices. This device has been optimized for use in these particular applications and provides the necessary amount of storage and speed for efficiently running applications on mobile devices.The MT29F16G08AJADAWP:D is also the ideal NAND flash memory for embedded applications such as gaming consoles, embedded PCs, digital TVs, Blu-Ray players, and various other forms of home entertainment systems. This device also provides the capability for high speed data transfers and reliable storage for mission critical applications.

Working Principle

The MT29F16G08AJADAWP:D is a 2Gb NAND Flash memory device, which means it is composed of several sub-blocks of memory cells. Memory cells are composed of several floating gate transistors, allowing each cell to store a single bit of data. The most common type of NAND flash memory is the Floating Gate Transistor (FGT), which consists of a single transistor and a single capacitor.When a charge is applied to the control gate, the cell stores a single bit of data. This bit can be programmed or erased by applying a voltage pulse to the control gate. When the voltage pulse is applied, the cell’s internal structure is modified and the bit is programmed. The high levels of integration of NAND flash memory allow for high speed data access and reliable storage.

Performance Characteristics

The MT29F16G08AJADAWP:D NAND flash memory offers exceptional performance characteristics. It has a 3-bit/cell architecture which allows for increased storage capacity and improved power efficiency. This device also has a burst mode capability, meaning it can read multiple memory blocks at once. This capability increases data access speed as well as decreases power consumption.In addition, this device also has an on-chip ECC engine, which provides an extra level of data protection. This ECC engine is capable of detecting and correcting up to 8 bits of physical data errors. This ECC engine provides the added protection of data integrity.

Conclusion

The MT29F16G08AJADAWP:D is an ideal memory solution for mobile embedded system applications, gaming consoles and other home entertainment applications. This device offers increased storage capacity and improved power efficiency compared to its predecessors. The on-chip ECC engine also provides an extra layer of data protection. All these features make the MT29F16G08AJADAWP:D a great choice for any application requiring reliable and high speed NAND flash memory.

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