MT29F16G08CBACAL72A3WC1 Allicdata Electronics
Allicdata Part #:

MT29F16G08CBACAL72A3WC1-ND

Manufacturer Part#:

MT29F16G08CBACAL72A3WC1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 16G PARALLEL WAFER
More Detail: FLASH - NAND Memory IC 16Gb (2G x 8) Parallel
DataSheet: MT29F16G08CBACAL72A3WC1 datasheetMT29F16G08CBACAL72A3WC1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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MT29F16G08CBACAL72A3WC1 is an advanced NAND flash memory component designed by Micron one of the leading providers of memory and storage solutions. It is a multi-level cell (MLC) component, which means that it stores two bits per cell, instead of one, thereby providing higher density, higher performance, and lower cost.

The MT29F16G08CBACAL72A3WC1 is an ideal chip for applications that require large amounts of data storage, such as high-end mobile phones, tablets, cameras and music players. It is also used in digital video recorders, camcorders, gaming consoles, and embedded systems.

The MT29F16G08CBACAL72A3WC1 uses a number of techniques in order to ensure reliable and fast data storage, including ECC (Error-Correction Code) and error-avoidance techniques. It also has an adaptive program algorithm which increases programming speed. Finally, the chip features Wear Leveling technology, which ensures that data can be evenly distributed across all memory blocks in the chip.

The MT29F16G08CBACAL72A3WC1 is based on the NAND flash technology, which is similar to NOR flash but with the main difference being that it stores data in blocks, instead of individual bytes. This makes it far more efficient and less expensive, as it requires less space for data storage and can be written to faster. This also makes it ideal for use in embedded applications, as it can be used to store large amounts of data without taking up a large amount of space.

The working principle of the MT29F16G08CBACAL72A3WC1 is based on the NAND flash technology. This requires the use of a voltage source, such as a battery, to supply power to the chip. To read or write data to the flash memory, a write enable line is activated, setting the chip into a “write” state. Data is then written to the memory through the use of an input/output (I/O) port. The data is stored in the memory until it is either erased or programmed again by setting the write enable line to “high”. The data can then be read back from the memory by setting the write enable line to “low”. Finally, the chip is reset to its original state by setting the write enable line to “high” once more.

In conclusion, the MT29F16G08CBACAL72A3WC1 is an advanced NAND flash memory component that is suitable for applications that require large amounts of data storage. It combines ECC and error-avoidance techniques with adaptive programming algorithms and Wear Leveling technology, ensuring data reliability and fast storage. The chip works on the principle of NAND flash technology, where data is written and stored in blocks, making it an attractive choice for embedded systems.

The specific data is subject to PDF, and the above content is for reference

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