MT29F1G08ABAEAH4:E TR

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The MT29F1G08ABAEAH4:E TR is a type of memory used in many different applications. It is a single-ended eight-gigabit NAND Flash memory device designed to meet reliable, low-power applications with excellent data timings. Its on-die ECC (Error Correction Code) provides faster, more reliable operation than conventional flash. Its greater durability and capacity makes it suitable for usage in modern industrial and consumer applications.

The main application field for the MT29F1G08ABAEAH4:E TR device is embedded systems, particularly those that rely heavily on data storage and retention. This device is suitable for data-intensive applications such as digital audio/video players, digital TVs, automotive and consumer electronics equipment, gaming systems, personal digital assistants, digital picture frames and other memory intensive applications. It is also used in digital cameras, digital telecommunications and computer systems.

The MT29F1G08ABAEAH4:E TR operates on a 3.3v or 2.7v supply. It has a 5 ns access time with a read speed of 166 Mb/s. Its maximum internal PGM frequency is 133 MHz and its maximum I/O frequency is 133 MHz. Its typical write performance is 27 Mb/s and reads at 166 Mb/s. Its write endurance is 10K P/E cycles and its read endurance is 1600.

The working principle of the MT29F1G08ABAEAH4:E TR memory is based on NAND Flash technology. NAND Flash memory is a type of non-volatile memory used in many consumer and business electronics. It is made up of small electric cells that can be used to store and access digital data. Each cell is composed of two transistors connected together to form a floating gate. When electric current is applied, electrons can be transferred onto the floating gate and stored. This stored charge can be read or written as digital data into the memory cell.

The NAND Flash memory device in the MT29F1G08ABAEAH4:E TR contains several integrated circuits made up of millions of cells that can store data. To read or write data, a user must first address the memory cell by its location in the array. The cell then gets triggered and its status can be read or written to. With its on-die ECC, it is able to detect and correct errors that may occur when reading and writing data.

The MT29F1G08ABAEAH4:E TR is a reliable and high-performance memory device. It is suitable for a variety of storage and memory intensive applications. With its on-die ECC and efficient NAND Flash technology, it ensures data integrity and reliability. It also has a long life span and excellent low-power operation.

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