
Allicdata Part #: | MT29F1G08ABAFAH4-ITE:F-ND |
Manufacturer Part#: |
MT29F1G08ABAFAH4-ITE:F |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL FBGA |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory
MT29F1G08ABAFAH4-ITE:F is a multi-level cell (MLC) NAND Flash memory module manufactured by Micron Technology. It is a high-density, low-power memory module that can be used in a variety of applications, including automotive, digital video, embedded media, and personal digital assistants (PDAs).
The MT29F1G08ABAFAH4-ITE:F is commonly found in automotive applications where it is used to store various types of data. It is also used in digital video systems to store video footage and images. The module is also used in embedded media applications for storing data like audio and video files. Finally, this memory module is also found in PDAs, where it is used to store important data.
The MT29F1G08ABAFAH4-ITE:F utilizes a multi-level cell architecture which provides a high level of data integrity and memory flexibility. This type of memory is able to store more data per cell compared to its single-level cell (SLC) counterparts. The memory module is also capable of withstanding extreme temperatures and shock, making it a suitable choice for automotive applications.
When it comes to the actual operation of the MT29F1G08ABAFAH4-ITE:F, it works in a similar fashion to any other NAND Flash memory module. It is composed of a set of memory cells which are connected together and enabled by an array of transistors. Each memory cell has two levels of data stored on it, one for the “0” state and one for the “1” state, and each one contains two to three times more data than a single-level cell. The memory module’s controller is responsible for mapping the cells, where it assigns each physical cell to a logical position in the array. This allows the module to read, write, and erase data in the array.
In addition to the memory module’s controller, the module is also equipped with error-correction, write protect, and data-compression algorithms. The controller, error-correction, and write protect algorithms work together to ensure data integrity and reliable operations of the memory module. Meanwhile, the data-compression algorithm allows the module to compress and store data in a more efficient manner, allowing more data to be stored in the same amount of physical space.
Overall, the MT29F1G08ABAFAH4-ITE:F is a reliable and cost-effective NAND Flash memory module suitable for a variety of applications. Its multi-level cell architecture allows for a greater capacity and its controller, error-correction, write protect, and data-compression algorithms ensure data integrity and reliable operations. These features make the MT29F1G08ABAFAH4-ITE:F an ideal choice for automotive, digital video, embedded media, and PDA applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT29F1G08ABBDAH4:D | Micron Techn... | -- | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F64G08CFACBWP-12:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
MT29F256G08CMCABH2-10Z:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F512G08CUCDBJ6-6R:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
MT29E1T08CMHBBJ4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29E768G08EEHBBJ4-3ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 768G PARALLEL 33... |
MT29F1T208ECCBBJ4-37:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
MT29TZZZ4D4BKERL-125 W.94M TR | Micron Techn... | 0.0 $ | 1000 | MCP 4GX8/128MX32 PLASTIC ... |
MT29F1T08CPCBBH8-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1G08ABAEAWP:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F2G08ABAEAH4-E:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F16G08ABABAWP-AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL TSO... |
MT29F2G01ABAGDSF-IT:G | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI SOICFLASH... |
MT29TZZZ8D5JKEZB-107 W.95Q | Micron Techn... | 0.0 $ | 1000 | MLC EMMC/LPDDR3 72GMemory... |
MT29F1G08ABBEAM68M3WC1 | Micron Techn... | 0.0 $ | 1000 | SLC 1G DIE 128MX8Memory I... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F1G16ABBEAH4-ITX:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29C4G96MAAHBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 4G PARAL 137... |
MT29F1T08CPCABH8-6:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 166M... |
MT29F256G08CJAAAWP-ITZ:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
MT29F16G08CBECBL72A3WC1P TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL WAF... |
MT29F4G16ABADAM60A3WC1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL WAFE... |
MT29F1T08CQCBBG2-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1T08CUCBBH8-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F384G08EBHBBJ4-3RES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 384G PARALLEL 33... |
MT29F1T08EMHAFJ4-3RES:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29F256G08CECEBJ4-37ITRES:E TR | Micron Techn... | 0.0 $ | 1000 | MLC 256G 32GX8 VBGA IT DD... |
MT29F1G08ABAEAWP-IT:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F256G08AUCABH3-10IT:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F32G08AFACAWP-IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F1G08ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F16G08ABACAWP-Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F16G08ABACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F1T08CUCABK8-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29E2T08CUHBBM4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
MT29F256G08CMEDBJ5-12IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
MT29F2T08CVCCBG6-6C:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
MT29F128G08AKEDBJ5-12:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 13... |
MT29F32G08ABCDBJ4-6ITR:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 166... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
