MT29F1G08ABAFAH4-ITE:F Allicdata Electronics
Allicdata Part #:

MT29F1G08ABAFAH4-ITE:F-ND

Manufacturer Part#:

MT29F1G08ABAFAH4-ITE:F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL FBGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel
DataSheet: MT29F1G08ABAFAH4-ITE:F datasheetMT29F1G08ABAFAH4-ITE:F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory

MT29F1G08ABAFAH4-ITE:F is a multi-level cell (MLC) NAND Flash memory module manufactured by Micron Technology. It is a high-density, low-power memory module that can be used in a variety of applications, including automotive, digital video, embedded media, and personal digital assistants (PDAs).

The MT29F1G08ABAFAH4-ITE:F is commonly found in automotive applications where it is used to store various types of data. It is also used in digital video systems to store video footage and images. The module is also used in embedded media applications for storing data like audio and video files. Finally, this memory module is also found in PDAs, where it is used to store important data.

The MT29F1G08ABAFAH4-ITE:F utilizes a multi-level cell architecture which provides a high level of data integrity and memory flexibility. This type of memory is able to store more data per cell compared to its single-level cell (SLC) counterparts. The memory module is also capable of withstanding extreme temperatures and shock, making it a suitable choice for automotive applications.

When it comes to the actual operation of the MT29F1G08ABAFAH4-ITE:F, it works in a similar fashion to any other NAND Flash memory module. It is composed of a set of memory cells which are connected together and enabled by an array of transistors. Each memory cell has two levels of data stored on it, one for the “0” state and one for the “1” state, and each one contains two to three times more data than a single-level cell. The memory module’s controller is responsible for mapping the cells, where it assigns each physical cell to a logical position in the array. This allows the module to read, write, and erase data in the array.

In addition to the memory module’s controller, the module is also equipped with error-correction, write protect, and data-compression algorithms. The controller, error-correction, and write protect algorithms work together to ensure data integrity and reliable operations of the memory module. Meanwhile, the data-compression algorithm allows the module to compress and store data in a more efficient manner, allowing more data to be stored in the same amount of physical space.

Overall, the MT29F1G08ABAFAH4-ITE:F is a reliable and cost-effective NAND Flash memory module suitable for a variety of applications. Its multi-level cell architecture allows for a greater capacity and its controller, error-correction, write protect, and data-compression algorithms ensure data integrity and reliable operations. These features make the MT29F1G08ABAFAH4-ITE:F an ideal choice for automotive, digital video, embedded media, and PDA applications.

The specific data is subject to PDF, and the above content is for reference

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