MT29F1G16ABBDAH4-IT:D TR Allicdata Electronics
Allicdata Part #:

MT29F1G16ABBDAH4-IT:DTR-ND

Manufacturer Part#:

MT29F1G16ABBDAH4-IT:D TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 1Gb (64M x 16) Parallel 6...
DataSheet: MT29F1G16ABBDAH4-IT:D TR datasheetMT29F1G16ABBDAH4-IT:D TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Base Part Number: MT29F1G16
Description

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Nowadays, as technology rapidly develops, memory has become an essential component in modern digital electronic devices. From personal computers to smart phones, almost all products contain memory in some shape or form. MT29F1G16ABBDAH4-IT:D TR is one of the most important types of memory in the industry.

The MT29F1G16ABBDAH4-IT:D TR is a 1.8V NAND Flash memory device, which combines high speed and low power consumption. It has a 1-Gigabit (128-Mbit) organization and features a 16-bit data bus. This particular device is built with 16 rows of 8-bit data bits and 4 banks. Its read/write time can reach 15 nanoseconds.

It has an efficient block size of 4.5-KByte (or 64X68). This feature allows it to offer excellent performance when executing read/write operations. Its block addressing is 4-byte-wide which allows updating of multiple-pages without reading other data from the memory first. In addition, it has a number of functions, such as Self-versatile Block-Lock, Randomizer, Accelerated Program/Erase, Data Vaccum, Bad-Bit Management and Data Integrity Penalty-Correction.

As a non-volatile memory component, the MT29F1G16ABBDAH4-IT:D TR can retain data even if the power is turned off. This makes it ideal for use in devices which require memory to store data for extended periods of time without power. It is also capable of high speed Endurance up to 10,000 Program/Erase cycles.

The main application field of MT29F1G16ABBDAH4-IT:D TR is embedded system-on-chip or embedded multi-chip solutions. It is used in smartphones and tablets, digital cameras, gaming consoles, Blu-ray players and other mass storage products. It is also used in automotive infotainment systems, automotive safety systems and automated control system.

The working principle of MT29F1G16ABBDAH4-IT:D TR is based on two main features — NAND Flash technology and Charger Enabled Multi-Page Programming Technology (CEMPT). The NAND Flash technology enables it to store data efficiently, while CEMPT facilitates high page-level programming with multiple pages of data being transferred at the same time. In addition, this device also contains an advanced array of safeguards and error correction code (ECC) algorithms to improve data integrity and protect data integrity. Finally, its programming and erasing cycles provide high speed, reliable operation and efficient data storage.

In conclusion, the MT29F1G16ABBDAH4-IT:D TR is an important member of the memory family due to its efficient performance, extended data retention and reliable operation. Its main application field is in embedded system solutions for smartphones, tablets, gaming consoles and other mass storage products. Moreover, the working principle of this device is based on the combination of NAND Flash technology and CEMPT. All these features ensure that the MT29F1G16ABBDAH4-IT:D TR provides a powerful and efficient source for all data storage and processing needs.

The specific data is subject to PDF, and the above content is for reference

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