MT29F1HT08EMCBBJ4-37ES:B TR Allicdata Electronics
Allicdata Part #:

MT29F1HT08EMCBBJ4-37ES:BTR-ND

Manufacturer Part#:

MT29F1HT08EMCBBJ4-37ES:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1.5T PARALLEL 267MHZ
More Detail: FLASH - NAND Memory IC 1.5Tb (192G x 8) Parallel 2...
DataSheet: MT29F1HT08EMCBBJ4-37ES:B TR datasheetMT29F1HT08EMCBBJ4-37ES:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1.5Tb (192G x 8)
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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MT29F1HT08EMCBBJ4-37ES:B TR memory is one of the commonly used high-density, high-speed non-volatile storage products. This type of memory is widely used in various applications, ranging from industrial control to embedded systems and medical equipment. It has also been used in commercial and civil aviation, automotive, and communications industries. This article will discuss the application field and working principle of this memory. The MT29F1HT08EMCBBJ4-37ES:B TR memory belongs to the NAND type of Flash memory. It is a one-time-programmable (OTP) non-volatile memory with an 8-byte wide data bus. It has a very small package size, which enables it for high-density applications. It also has a very fast read and write performance, which makes it suitable for high-speed applications. The main application fields for the MT29F1HT08EMCBBJ4-37ES:B TR memory are embedded systems and industrial control applications. In embedded systems, this memory can be used to store and execute software or to hold the system\'s configuration. It can also be used to store data or applications in industrial control systems. The MT29F1HT08EMCBBJ4-37ES:B TR memory works using a process called floating gate technology. In this process, a voltage is applied to the memory cell, causing a thin barrier to form over the silicon layer. When another voltage is applied, electrons are injected into the barrier, changing the resistance in the cell. This change in resistance is then stored as an electrical charge representing binary data. The MT29F1HT08EMCBBJ4-37ES:B TR memory supports the industry-standard JEDEC NAND protocol. This protocol allows for reads and writes of 8, 16, or 32 bits at a time. It also supports advanced wear-leveling algorithms and error correction codes for data integrity. These features ensure that the user\'s data is stored safely and reliably. The MT29F1HT08EMCBBJ4-37ES:B TR memory is a high-density, high-speed non-volatile memory solution for a variety of embedded system and industrial control applications. Its small package size and fast read and write performance make it suitable for these applications. It is also equipped with advanced wear-leveling algorithms and error correction codes for data integrity. In conclusion, the MT29F1HT08EMCBBJ4-37ES:B TR memory is a reliable and durable storage solution for a variety of embedded system and industrial control applications. Its small package size and fast read and write performance make it suitable for these applications. Its advanced wear-leveling algorithms and error correction codes also ensure that the user\'s data is stored safely and reliably.

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