
Allicdata Part #: | MT29F256G08AUCABH3-10IT:ATR-ND |
Manufacturer Part#: |
MT29F256G08AUCABH3-10IT:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256G PARALLEL 100MHZ |
More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 10... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 256Gb (32G x 8) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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Memory devices are essential components used in almost all electronic systems today, especially those with complex processing requirements. The MT29F256G08AUCABH3-10IT:A TR is an example of a memory chip that is used for a variety of applications. This article will explore the application field and working principle of the memory chip.
The Application Field Of MT29F256G08AUCABH3-10IT:A TR
The MT29F256G08AUCABH3-10IT:A TR is a multi-level cell non volatile memory, or NVM, device. This means that it can store and retrieve data without an external power source, making it ideal for applications where battery life and reliability are paramount. It is often used in controlling systems and medical devices, where frequent data writing and reading is required and power loss protection is essential. In addition to these applications, it can also be used in embedded systems and gaming consoles, where writing data and maintaining battery power is important.
The chip is also known for its increased reliability compared to other memory devices. This is due to its unique structure and unique NVM design, which helps it to withstand temperature, voltage, and other environmental changes that can significantly affect the integrity of stored data. As a result, the device is often used in mission-critical applications, such as automotive, aerospace, and military systems, where reliability and longevity are essential.
The Working Principle of MT29F256G08AUCABH3-10IT:A TR
The MT29F256G08AUCABH3-10IT:A TR uses a Multi-Level Cell memory design that is based on a unique array of higher-amplitude charge transistors. This design improves the insulation performance of the chip and maximizes the total amount of data that can be stored and retrieved. With this innovative design, the memory chip can achieve higher read/write speeds and greater data transfer efficiency than regular memory designs.
The chip also features an advanced error-correction system. This feature enables it to detect, correct, and mask errors in stored data, so that the reliability of stored data is maintained. This feature is critical for mission-critical applications, as it ensures that data stored in the chip is not corrupted and can be correctly retrieved.
In terms of energy efficiency, the chip requires low power to operate, making it ideal for battery-powered applications. In normal operating conditions, it has a Standby power consumption of less than 1µW and an active power consumption of 4.3mA. This helps ensure that the chip does not significantly drain the battery when used in portable applications.
Conclusion
The MT29F256G08AUCABH3-10IT:A TR is a reliable and efficient memory device that has a wide range of applications. It is well-suited for mission-critical applications, due to its high-performance design and advanced error-correction system. It is also highly energy-efficient, making it ideal for battery-powered devices. As a result, the chip is an excellent choice for a variety of applications.
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