Allicdata Part #: | MT29F256G08AUCABK4-10:ATR-ND |
Manufacturer Part#: |
MT29F256G08AUCABK4-10:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256G PARALLEL 100MHZ |
More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 10... |
DataSheet: | MT29F256G08AUCABK4-10:A TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 256Gb (32G x 8) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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Memory plays an integral role in the operation of modern electronic equipment, with RAM, ROM, and flash memory applications being some of the most common. Within the realm of flash memory, one of the most popular and powerful options is the MT29F256G08AUCABK4-10. This chip is a 256 Gb 3D NAND flash memory that offers excellent performance, reliability, and convenience for a variety of applications.
The MT29F256G08AUCABK4-10 has been designed for embedded applications, such as consumer electronics, consumer applications, automotive designs, and industrial equipment. With this chip embedded into such devices, the device can be powered up faster, it can hold more information and make it accessible in a shorter period of time. It also offers high reliability with data retention up to two years and endures up to three million erase cycles.
The MT29F256G08AUCABK4-10 is also an excellent choice for data storage applications because of its small size and wide compatibility. The chip has a 3D NAND architecture that allows it to provide higher densities in the same size as traditional memory architecture. This makes it perfect for applications that have stringent demands on space, such as small consumer electronic devices, while still providing high performance.
The working principle of the MT29F256G08AUCABK4-10 is not much different from other flash memory chips. It is comprised of multiple memory cells, each of which is a single transistor with a floating gate. Data is stored in these individual cells, and they can be read, written, or erased by applying the appropriate signals. Reading and writing data to the memory cells is done serially, with one cell being accessed at a time. Erasing is typically donepusing a bulk erase, which erases all cells in the chip at once.
The MT29F256G08AUCABK4-10 also has some additional features and capabilities that make it attractive for many applications. It has an on-die ECC function and an in-package 8-bit one-time programmable memory (OTP), which can be used for customization of applications, such as storing unique ID\'s, authentication keys, and calibration values.
The MT29F256G08AUCABK4-10 is an extremely powerful and convenient option for embedded and data storage applications. Its 3D NAND architecture provides high memory densities, and its high reliability makes it suitable for even the most stringent requirements. Coupled with additional features such as ECC and OTP, it provides a great solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
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MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
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