MT29F256G08AUEDBJ6-12:D Allicdata Electronics
Allicdata Part #:

MT29F256G08AUEDBJ6-12:D-ND

Manufacturer Part#:

MT29F256G08AUEDBJ6-12:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256G PARALLEL 83MHZ
More Detail: FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 83...
DataSheet: MT29F256G08AUEDBJ6-12:D datasheetMT29F256G08AUEDBJ6-12:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Memory, which is used to represent data stored in a computer system, is composed of various types of devices. Each of them has different application fields and working principles. MT29F256G08AUEDBJ6-12:D, manufactured by Micron, is one of the most popular memory products in the industry, known for its high performance and reliable service. In this article, we are going to discuss the application field and working principles of MT29F256G08AUEDBJ6-12:D.

Application Field

The primary application field of the MT29F256G08AUEDBJ6-12:D belongs to data storage for mobile devices such as smartphones and wearable items. It is an ideal solution for these kinds of products since its small form factor makes it easy to be integrated inside the device. Moreover, its 3D NAND architecture has a significant improvement in performance and power consumption over traditional NAND. Thanks to its advanced technologies and extensive research, its reliability and consistency are also excellent.

Additionally, MT29F256G08AUEDBJ6-12:D also could be a good candidate for data center storage as it features a reduced latency compared to conventional NAND. It is able to deliver data transmission speeds up to 600MB/s, which is crucial for data processing and streaming services. Furthermore, its advanced error correction codes increase its endurance and reliability in mission-critical applications.

Working Principle

The working principle of MT29F256G08AUEDBJ6-12:D is based on the principle of impedance components which it contains. Impedance components, such as resistors and capacitors, are used to store data as voltage fluctuates between them. When a voltage is applied, the impedance components enter a resonance state, allowing the data to be encoded in the voltage fluctuations. By using the resonance principle, MT29F256G08AUEDBJ6-12:D can store up to 256GB of data.

Moreover, it is also able to carry out data reading and writing operations. For data reading, the device first determines whether the data to be read is valid or not. If the data is valid, then it proceeds to read the data and decode it. For data writing, the device will first encode the data and then write it to an appropriate location. Finally, it will verify the written data to ensure its accuracy.

Conclusion

MT29F256G08AUEDBJ6-12:D is an ideal choice for mobile devices due to its small form factor, 3D NAND architecture, and improved performance and power consumption. For data centers, its low latency and data transmission speeds make it a reliable choice for mission-critical applications. Moreover, the working principle based on impedance components is able to deliver a reliable and consistent service. Therefore, MT29F256G08AUEDBJ6-12:D would be a great choice for any storage solutions.

The specific data is subject to PDF, and the above content is for reference

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